Abb Schweiz Ag

Neophythos Lophitis

Florin Udrea

Munaf Rahimo

Martin Arnold

Jan Vobecky

Iulian Nistor

Umamaheswara Vemulapati

Lulian Nistor

A RC power semiconductor is provided which comprises a plurality of diode cells and a plurality of GCT cells. Each GCT cell comprises a first cathode layer with at least three cathode layer regions, which are separated from each other by a base layer. In orthogonal projection onto a plane parallel to the first main side each one of the cathode layer regions is strip-shaped and a width (w, w'), wherein the diode cells alternate with the GCT cells in a lateral direction in at least a mixed part, wherein in each GCT cell, the width (w&#x2032;) of each one of the two outer cathode layer regions next to a diode cell neighboring to that GCT cell is less than the width (w) of any intermediate cathode layer region between the two outer cathode layer regions in that GCT cell.

Reverse conducting power semiconductor device

Growing community of inventors

Cambridge, United Kingdom

Neophythos Lophitis