Xerox Corporation

Neng-Tze Yang

John W Wu

Eugene J Mar

Ngaiman Chau

In a high-density VLSI NMOS semiconductor such as a ROM, a voltage sensing mode amplifier in the output thereof, operative to sense relatively very low input signal swing bit read signals from the ROM with relative insensitivity to fabrication process variation. The structure includes a common gate amplifier for receiving the ROM signal, a very sensitive reference voltage circuit, a two-stage differential digital switching module operative to compatively receive the common gate and voltage reference signals to effectively distinguish relatively weak bit signals as read from the high-density VLSI ROM.

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Rancho Palos Verdes, CA, United States of America

Neng-Tze Yang