Nan Ya Technology Corporation

Neng Tai Shih

Shian-Jyh Lin

Ming-Cheng Chang

Hung-Chang Liao

Chiang Hung Lin

Kee Wei Chung

A method of forming an integrated circuit structure comprises the steps of: providing a semiconductor substrate having a first side and a second side opposite the first side; forming a hole extending from the first side of the semiconductor substrate into the semiconductor substrate; filling the hole with conductive material; thinning the second side of the semiconductor substrate to a first predetermined thickness, so that the bottom of the hole does not protrude from the second side of the semiconductor substrate; and etching the second side of the semiconductor substrate to a second predetermined thickness, thereby exposing the bottom of the hole.

Integrated circuit structure and method of forming the same

A trench-type semiconductor device structure is disclosed. The structure includes a semiconductor substrate, a gate dielectric layer and a substrate channel structure. The semiconductor substrate includes a trench having an upper portion and a lower portion. The upper portion includes a conductive layer formed therein. The lower portion includes a trench capacitor formed therein. The gate dielectric layer is located between the semiconductor substrate and the conductive layer. The substrate channel structure with openings, adjacent to the trench, is electrically connected to the semiconductor substrate via the openings.

Growing community of inventors

Taoyuan County, Taiwan

Neng Tai Shih