Ams Ag

Ams International Ag

Nenad Lilic

Robert Kappel

Georg Röhrer

Georg Roehrer

The SPAD device comprises a single-photon avalanche diode and a further single-photon avalanche diode having breakdown voltages, the single-photon avalanche diodes being integrated in the same device. The breakdown voltages are equal or differ by less than 10%. The single-photon avalanche diode is configured to enable to induce triggering or to have a dark count rate that is higher than the dark count rate of the further single-photon avalanche diode.

SPAD device for excess bias monitoring

A charge pump circuit arrangement includes a multitude of capacitors of a first and a second group controlled by non-overlapping clock pulses. The capacitors are partly realized in a semiconductor substrate including a deep well doping region and a high voltage doping region surrounded by the deep well doping region. Switches are connected to a pair of capacitors to control the deep well doping regions with signals in phase with the corresponding clock signal.

Charge pump circuit arrangement

The semiconductor device comprises a bipolar transistor with emitter, base and collector, a current or voltage source electrically connected with the emitter, and a quenching component electrically connected with the collector, the bipolar transistor being configured for operation at a collector-to-base voltage above the breakdown voltage.

Semiconductor device with single electron counting capability

A avalanche diode arrangement comprises an avalanche diode () that is coupled to a first voltage terminal () and to a first node (), a latch comparator () with a first input () coupled to the first node (), a second input () for receiving a reference voltage (VREF) and an enable input () for receiving a comparator enable signal (CLK), and a quenching circuit () coupled to the first node ().

Avalanche diode arrangement and method for controlling an avalanche diode arrangement

The device comprises a bipolar transistor with emitter, base, collector, base-collector junction and base-emitter junction, a collector-to-base breakdown voltage, a quenching component electrically connected with the base or the collector, and a switching circuitry configured to apply a forward bias to the base-emitter junction. The bipolar transistor is configured for operation at a reverse collector-to-base voltage above the breakdown voltage.

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Premstaetten, Austria

Nenad Lilic