Micron Technology Incorporated

Neil Petrie

Joseph P Kerzman

Kevin R Duncan

Steven G Wurzer

Yoav Weinberg

An example apparatus include an array of memory cells. The example apparatus includes a memory controller coupled to the array. The memory controller can include an internal reference resistor. The memory controller can be configured to monitor memory characteristics for the array and the memory controller. The memory controller can be configured to trim the internal reference resistor to result in a target resistance value based on the memory characteristics.

Internal reference resistor for non-volatile memory

Apparatuses and methods for phase interpolators are provided. An example apparatus comprises a phase interpolator and a controller coupled to the phase interpolator. The controller is configured to provide a digital timing code to the phase interpolator, and the phase interpolator is configured to apply a correction to the received digital timing code based, at least in part, on phase interpolator error correction data from a data structure containing phase interpolator error correction data.

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St. Louis Park, MN, United States of America

Neil Petrie