Gtat IP Holding LLC.

Neil Middendorf

William L Luter

Dick S Williams

Bayard K Johnson

John P Deluca

David J Dubiel

Verlin A Lauher

Nels Patrick Ostrom

Howard P Zinschlag

James N Highfill

Frank S Delk, Ii

Dicks S Williams

A Czochralski growth system is described comprising a growth chamber, a feed port, and a feed chamber comprising a container for feedstock and a feeder. The feed port is disposed in at least one side wall of the growth chamber, and the feed chamber is attached to the growth chamber at the feed port. The feeder is insertable into the growth chamber through the feed port and supplies the feedstock into the growth chamber. Preferably this system can be used for producing silicon ingots using a continuous Czochralski method.

Side feed system for Czochralski growth of silicon ingots

A doped silicon single crystal having a resistivity variation along a longitudinal and/or radial axis of less than 10% and a method of preparing one or a sequential series of doped silicon crystals is disclosed. The method includes providing a melt material comprising silicon into a continuous Czochralski crystal growth apparatus, delivering a dopant, such as gallium, indium, or aluminum, to the melt material, providing a seed crystal into the melt material when the melt material is in molten form, and growing a doped silicon single crystal by withdrawing the seed crystal from the melt material. Additional melt material is provided to the apparatus during the growing step. A doping model for calculating the amount of dopant to be delivered into the melt material during one or more doping events, methods for delivering the dopant, and vessels and containers used to deliver the dopant are also disclosed.

Silicon single crystal doped with gallium, indium, or aluminum

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St. Louis, MO, United States of America

Neil Middendorf