Miasole

Beijing Apollo Ding Rong Solar Technology Co., Ltd.

Other

University of Illinois

Lawrence Livermore National Security, LLC

Novellus Systems Incorporated

Mattson Technology, Inc

Apollo Precision Fujian Limited

Neil Mackie

Daniel R Juliano

John Frederick Corson

Robert D Tas

Deborah Mathias

Ron Rulkens

Weijie Zhang

Alex Austin

Robert Zubeck

Jochen Titus

Paul K Shufflebotham

Mats Larsson

Abdelouahab Ziani

Korhan Demirkan

Randy Dorn

Asit Rairkar

Ajay Saproo

Dan Vitkavage

Swati Sevanna

Robert T Rozbicki

Roey Shaviv

Martin L Zucker

Alexander Dulkin

Vincenzo Lordi

Steven C Selbrede

Angus A Rockett

Joel Varley

Geordie Zapalac

Xiaoqing He

Rouin Farshchi

A method of manufacturing a photovoltaic structure includes forming a p-type semiconductor absorber layer containing a copper indium gallium selenide based material over a first electrode, forming a n-type cadmium sulfide layer over the p-type semiconductor absorber layer by sputtering in an ambient including hydrogen gas and oxygen gas, and forming a second electrode over the cadmium sulfide layer.

Hexagonal phase epitaxial cadmium sulfide on copper indium gallium selenide for a photovoltaic junction

A solar cell containing a plurality of CIGS absorber sublayers has a conversion efficiency of at least 13.4 percent and a minority carrier lifetime below 2 nanoseconds. The sublayers may have a different composition from each other.

Photovoltaic cell with high efficiency CIGS absorber layer with low minority carrier lifetime and method of making thereof

A method of making a semiconductor structure includes a step of sputtering silver, copper, indium, and gallium on a substrate in an ambient including at least one chalcogen to deposit an alloy of silver, copper, indium, gallium, and at least one chalcogen. A film of the alloy can be deposited on a continuously moving substrate with a high throughput to form a p-type semiconductor absorber layer of a photovoltaic cell.

Silver copper indium gallium selenide reactive sputtering method and apparatus, and photovoltaic cell containing same

Photovoltaic cell with high efficiency cigs absorber layer with low minority carrier lifetime and method of making thereof

A photovoltaic cell includes a p-type copper-indium-gallium-selenide absorber layer, where a content of Cu, In, and Ga in a first portion of the p-type copper-indium-gallium-selenide absorber layer satisfies the equation Cu/(In+Ga)&#x2266;0.3, and where the content is measured in atomic percent.

Photovoltaic cell with copper poor CIGS absorber layer and method of making thereof

A sputtering target includes at least one metal selected from copper, indium and gallium and a sodium containing compound.

Sodium salt containing CIG targets, methods of making and methods of use thereof

A solar cell includes a substrate, a first electrode located over the substrate, where the first electrode comprises a first transition metal layer, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode located over the n-type semiconductor layer. The first transition metal layer contains (i) an alkali element or an alkali compound and (ii) a lattice distortion element or a lattice distortion compound. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material.

Method and apparatus for controllable sodium delivery for thin film photovoltaic materials

A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.

Method of forming a sputtering target

A method of making a photovoltaic device includes forming a compound semiconductor layer including copper, indium, gallium, selenium and sulfur by reactive sputtering at least one target including copper, indium, gallium and a sulfur compound in an atmosphere including selenium.

Sulfur salt containing CIG targets, methods of making and methods of use thereof

Barrier for doped molybdenum targets

A method of manufacturing a solar cell includes providing a substrate, depositing a first electrode comprising an alkali-containing transition metal layer over the substrate, depositing at least one p-type semiconductor absorber layer over the first electrode, wherein the p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, depositing an n-type semiconductor layer over the p-type semiconductor absorber layer, and depositing a second electrode over the n-type semiconductor layer. The step of depositing the alkali-containing transition metal layer includes sputtering from a first target comprising the transition metal and a second target comprising the alkali metal, where a composition of the first target is different from a composition of the second target.

Method for alkali doping of thin film photovoltaic materials

Growing community of inventors

Fremont, CA, United States of America

Neil Mackie