Coolcad Electronics, LLC

University System of Maryland

Trx Systems, Inc.

National Security Agency

The U.S. Government As Represented by the National Security Agency

Untethered Labs, Inc.

Neil Goldsman

Akin Akturk

Zeynep Dilli

Mitchell Adrian Gross

Brendan Michael Cusack

Carole Teolis

Benjamin E Funk

Amrit Bandyopadhyay

Eric Asher Kohn

George M Metze

Quirino Balzano

Martin C Peckerar

Yves T Ngu

Gilmer Blankenship

Xi Shao

Felice M Vanin

Siddharth Potbhare

Bo Yang

Michael Khbeis

Christopher James Darmody

Usama Khalid

Aysanew Abate

Stefan Giroux

Gilmer L Blankeship

Carole A Teolis

Gilmer L Blankenship

A high-temperature silicon carbide device, along with an integrated circuit including the device and method of fabricating the device are described. For example, the method includes forming one of a source region and a drain region of a silicon carbide metal-oxide-semiconductor device. The method may include forming a gate structure adjacent to either one of the source region and the drain region. The gate structure may include an insulating layer. The method may further include forming the insulating layer with a first growth step performed in a pure oxygen environment and with a second growth step performed in a nitrous oxide environment.

Fabrication of a high temperature silicon carbide transistor device

A SiC integrated circuit structure which allows multiple power MOSFETs or LDMOSs to exist in the same piece of semiconductor substrate and still function as individual devices which form the components of a given circuit architecture, for example, and not by limitation, in a half-bridge module. In one example, a deep isolation trench is etched into the silicon carbide substrate surrounding each individual LDMOS device. The trench is filled with an insulating material. The depth of the trench may be deeper than the thickness of an epitaxial layer to ensure electrical isolation between the individual epitaxial layer regions housing the individual LDMOSs. The width of the trench may be selected to withstand the potential difference between the bias levels of the body regions of neighboring power LDMOS devices.

Structure for silicon carbide integrated power MOSFETs on a single substrate

An integrated ultraviolet (UV) detector includes a silicon carbide (SiC) substrate, supporting metal oxide field effect transistors (MOSFETs), and PN Junction photodiodes. The MOSFET includes a first drain/source implant in the SiC substrate and a second drain/source implant in the SiC substrate. The P-N junction photodiodes include a blanket oxide over the silicon carbide substrate and the gate, an implant extending into the silicon carbide substrate, and an opening extending through the blanket oxide layer down to the silicon carbide substrate on one side of the gate of the P-N junction photodiode.

Photodetector in a silicon carbide integrated circuit

An integrated ultraviolet (UV) detector includes a silicon carbide (SiC) substrate, supporting metal oxide field effect transistors (MOSFETs), Schottky photodiodes, and PN Junction photodiodes. The MOSFET includes a first drain/source implant in the SiC substrate and a second drain/source implant in the SiC substrate. The Schottky photodiodes include another implant in the SiC substrate and a surface metal area configured to pass UV light.

Silicon carbide integrated circuit including P-N junction photodiode

Silicon carbide integrated circuit active photodetector

A thin, rechargeable, flexible electrochemical energy cell includes a battery cell, or a capacitor cell, or a battery/capacitor hybrid cell that can be stackable in any number and order. The cell can be based on a powdery mixture of hydrated ruthenium oxide particles or nanoparticles with activated carbon particles or nanoparticles suspended in an electrolyte. The electrolyte may contain ethylene glycol, boric acid, citric acid, ammonium hydroxide, organic acids, phosphoric acid, and/or sulphuric acid. An anode electrode may be formed with a thin layer of oxidizable metal (Zn, Al, or Pb). The cathode may be formed with a graphite backing foil. The energy cell may have a voltage at or below 1.25V for recharging. The thickness 15 of the cell structure can be in the range of 0.5 mm-1 mm, or lower.

Thin flexible rechargeable electrochemical energy cell and method of fabrication

Disclosed herein is a system and method for wireless proximity-based access to a computing system, which in accordance with certain aspects of an embodiment of the invention includes a small, portable, person-carried or personal-item-carried (e.g., by attachment to a user's key's, purse, knapsack, etc.) wireless transmitter that serves as a 'key,' and a wireless receiver configured for attachment to the computing system that serves as a 'lock.' The lock may comprise, for example, a USB device that both wirelessly communicates with the key to detect its physical proximity, and communicates with the computer access software that is native on the computing system (e.g., standard WINDOWS username and password authentication processes) to either allow or disallow such computer access software from allowing access to the computing system based upon the physical proximity of the key to the lock.

System and method for wireless proximity-based access to a computing device

The invention is directed to methods and systems for locating and monitoring the status of people and moveable assets, such as first responders, including firefighters and other public service personnel, and their equipment both indoors and out. The invention provides for locating and monitoring the status of people and assets in environments where GPS systems do not operate, or where operation is impaired or otherwise limited. The system and method uses inertial navigation to determine the location, motion and orientation of the personnel or assets and communicates with an external monitoring station to receive requests for location, motion orientation and status information and to transmit the location, motion orientation and status information to the monitoring station.

Method and system for locating and monitoring first responders

The present invention is directed to methods and systems for locating and monitoring the status of people and moveable assets, such as first responders, including firefighters and other public service personnel, and their equipment both indoors and out. The invention can provide for locating and monitoring the status of people and assets in environments where GPS systems do not operate, or where operation is impaired or otherwise limited. The system and method uses inertial navigation to determine the location, motion and orientation of the personnel or assets and communicates with an external monitoring station to receive requests for location, motion orientation and status information and to transmit the location, motion orientation and status information to the monitoring station. The system and method can include storing the location, motion and orientation data as well as status data, in the event that the communication system is unable to communicate with and transmit information to the monitoring station, the system will wait until communication is restored and transmit the status information to the monitoring station to update the location, motion orientation and status information for the person or asset.

An F-inverted compact antenna for ultra-low volume Wireless Sensor Networks is developed with a volume of 0.024&#x3bb;&#xd7;0.06&#x3bb;&#xd7;0.076&#x3bb;, ground plane included, where &#x3bb; is a resonating frequency of the antenna. The radiation efficiency attained is 48.53% and the peak gain is &#x2212;1.38 dB. The antenna is easily scaled to higher operating frequencies up to 2500 MHz bands with comparable performance. The antenna successfully transmits and receives signals with tolerable errors. It includes a standard PCB board with dielectric block thereon and helically contoured antenna wound from a copper wire attached to the dielectric block and oriented with the helix axis parallel to the PCB. The antenna demonstrates omnidirectional radiation patterns and is highly integratable with WSN, specifically in Smart Dust sensors. The antenna balances the trade offs between performance and overall size and may be manufactured with the use of milling technique and laser cutters.

F-inverted compact antenna for wireless sensor networks and manufacturing method

A cooling device for a microcircuit provides a direct path of thermal extraction from a high heat producing area to a cooler area. A thermal insulation layer is formed on a body having at least one component thereon that generates the high heat producing area. At least one via is formed through an entire thickness of the insulation layer and is in direct communication with the high heat producing area. Heat from the high heat producing area is channeled through each via to the cooler area, which may be ambient atmosphere or a good thermal conductor, such as a heat sink. A thermal conductive material may be deposited within the via and increase the rate of thermal extraction therethrough.

Use of thermally conductive vias to extract heat from microelectronic chips and method of manufacturing

Growing community of inventors

Takoma Park, MD, United States of America

Neil Goldsman