Pyreos Ltd.

Neil Conway

Carsten Giebeler

Tim Chamberlain

Timothy John Chamberlain

The invention relates to a method for producing the thin film made of lead zirconate titanate in a 111-oriented perovskite structure, comprising the following steps: providing a substrate having a substrate temperature above 450&#xb0; C. and a lead target, a zirconium target, and a titanium target; applying the thin film by sputtering lead, zirconium, and titanium from the respective targets onto the substrate, wherein the total deposition rate of lead, zirconium, and titanium is greater than 10 nm/min, the deposition rate of zirconium is selected in such a way that the atomic concentration of zirconium with respect to the atomic concentration of zirconium together with titanium in the thin film is between 0.2 and 0.3, and the deposition rate of lead is selected to be sufficiently low, depending on the substrate temperature and the total deposition rate of lead, zirconium, and titanium, for an X-ray diffractometer graph of the 111-oriented lead zirconate titanate to have a significant peak value (19) in a diffraction angle range from 33 to 35.5&#xb0;; and completing the thin film.

Method for producing a thin film made of lead zirconate titanate

A Method for producing a microsystem () with pixels includes: producing a thermal silicon oxide layer on the surface of a silicon wafer as a base layer () by oxidation of the silicon wafer; producing a silicon oxide thin layer on the base layer as a carrier layer ()by thermal deposition; producing a platinum layer on the carrier layer by thermal deposition, whereby an intermediate product is produced; cooling the intermediate product to room temperature; pixel-like structuring of the platinum layer by removing surplus areas of the platinum layer, whereby bottom electrodes () of the pixels () are formed in pixel shape on the carrier layer in remaining areas; removing material on the side of the silicon wafer facing away from the base layer, so a frame () remains and a membrane () formed by the base layer and the carrier layer is spanned by the frame.

Method for producing a microsystem having pixels

An infrared light detector having a sensor chip (), which includes a thin-film element () made from a pyroelectrically sensitive material, having an electrical insulator (), at least one electronic component () having a thin-film design, which forms part of a readout electronics unit, and a thin-film membrane (), on which the sensor chip () and the electronic component () are mounted side by side in an integrated manner such that the electronic component () is electrically conductively coupled to the thin-film element (). A signal amplifier (), with which, in co-operation with the electronic component (), an electrical signal emitted from the sensor chip () can be amplified, can be connected to the electronic component ().

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Fife, United Kingdom

Neil Conway