Sigma-aldrich Co. LLC

Neil Boag

Rajesh Odedra

Ravi Kanjolia

Jeff Anthis

David W Weyburne

Mark Saly

Raj Odedra

A method for forming a cobalt-containing thin film by a vapor deposition process is provided. The method comprises using at least one precursor corresponding in structure to Formula (I); wherein Rand Rare independently C-C-alkyl; x is zero, 1 or 2; and y is zero or 1; wherein both x and y can not be zero simultaneously. 

High molecular weight alkyl-allyl cobalttricarbonyl complexes and use thereof for preparing dielectric thin films

Organometallic complexes and use thereof in thin film deposition, such as CVD and ALD are provided herein. The organometallic complexes are (alkyl-substituted &#x3b7;-allyl)(carbonyl)metal complexes.

Alkyl-substituted allyl carbonyl metal complexes and use thereof for preparing dielectric thin films

Methods of forming thin metal-containing films by chemical phase deposition, particularly atomic layer deposition (ALD) and chemical vapor deposition (CVD), are provided. The methods comprise delivering at least one organometallic precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula (II); wherein: M is Ru, Fe or Os; R is Q-C-alkyl; X is C-C-alkyl; and n is zero, 1, 2, 3, 4 or 5. Further provided are methods of making precursors disclosed herein.

Methods of forming thin metal-containing films by chemical phase deposition

An organometallic precursor is provided. The precursor corresponds in structure to Formula I:Cp(R)M(CO)(X)&#x2003;&#x2003;(Formula I)wherein: M is Ru, Fe or Os; R is C-C-alkyl; X is C-C-alkyl; and n is 1, 2, 3, 4 or 5. The precursors are useful in chemical phase deposition processes, such as atomic layer deposition (ALD) and chemical vapor deposition (CVD).

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Mytholmroyd W. Yorkshire, United Kingdom

Neil Boag