Seh America, Inc.

Neil A Weaver

Sergei V Koveshnikov

Oleg V Kononchuk

Zbigniew J Radzimski

An improved method of obtaining a wafer exhibiting high resistivity and high gettering effect while preventing the reduction of resistivity due to the generation of oxygen donors provided by: a) using the CZ method to grow a silicon single crystal ingot having a resistivity of 100 &OHgr;&middot;cm or more, preferably 1000 &OHgr;&middot;cm, and an initial interstitial oxygen concentration of 10 to 40 ppma while doping the crystal with an electrically inactive material such as nitrogen, carbon, or tin, b) processing the ingot into a wafer, and c) subjecting the wafer to an oxygen precipitation heat treatment whereby the residual interstitial oxygen content in the wafer is reduced to about 8 ppma or less.

High resistivity silicon wafer having electrically inactive dopant and method of producing same

A method of obtaining a wafer exhibiting high resistivity and high gettering effect while preventing the reduction of resistivity due to the generation of oxygen donors, and while further minimizing in-grown defects is provided by: a) using the CZ method to grow a silicon single crystal ingot having a resistivity of 100 &OHgr;&middot;cm or more, preferably 1000 &OHgr;&middot;cm, and an initial interstitial oxygen concentration of 10 to 40 ppma with a v/G ratio of from about 1&times;10 cm /s&middot;K to about 5&times;10 cm /s&middot;K, b) processing the ingot into a wafer, and c) subjecting the wafer to an oxygen precipitation heat treatment whereby the residual interstitial oxygen content in the wafer is reduced to about 8 ppma or less.

High resistivity silicon wafer produced by a controlled pull rate czochralski method

A high resistivity wafer which does not exhibit diminishing resistivity after device installation and method of making the high resistivity wafer comprising a) using the CZ method to grow a silicon single crystal ingot with a resistivity of 100 &OHgr;&middot;cm or more, preferably 1000 &OHgr;&middot;cm or more, and an initial interstitial oxygen concentration of 10 to 40 ppma, b) processing the ingot into a wafer, c) determining the total amount of heat treatment required to reduce the interstitial oxygen content of the wafer to about 8 ppma or less, d) determining the amount of heat treatment which will take place during the device fabrication process after wafer fabrication, e) subjecting the wafer to a partial oxygen precipitation heat treatment equivalent to the total amount of heat treatment, less the amount of heat treatment that will occur during device fabrication.

Method of producing a high resistivity silicon wafer utilizing heat treatment that occurs during device fabrication

A silicon wafer having a thick, high-resistivity epitaxially grown layer and a method of depositing a thick, high-resistivity epitaxial layer upon a silicon substrate, such method accomplished by: a) providing a silicon wafer substrate and b) depositing a substantially oxygen free, high-resistivity epitaxial layer, with a thickness of at least 50 &mgr;m, upon the surface of the silicon wafer. The silicon wafer substrate may then, optionally, be removed from the epitaxial layer.

High resistivity silicon wafer with thick epitaxial layer and method of producing same

An improved method of obtaining a wafer exhibiting high resistivity while preventing the reduction of resistivity due to the generation of oxygen donors provided by: a) using the CZ method to grow a silicon single crystal ingot in the presence of a magnetic field, such crystal having a resistivity of 100 &OHgr;&middot;cm or more and an initial interstitial oxygen concentration of 5 to 10 ppma and b) processing the ingot into a wafer.

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Battle Ground, WA, United States of America

Neil A Weaver