General Electric Company

Gec-marconi Limited

Bae Systems, Inc.

Neil A Cade

Rosemary A Lee

David Francis Howell

Nandasiri Samarakone

Helen A Williams

Michael J Allaway

Chandrakant Patel

Stuart T Birrell

Peter W Green

A controller is provided, operable to control a system on the basis of measurement data received from a plurality of sensors indicative of a state of the system, with at least partial autonomy, but in environments in which it is not possible to fully determine the state of the system on the basis of such sensor measurement data. The controller, includes: a system model, defining at least a set of probabilities for the dynamical evolution of the system and corresponding measurement models for the plurality of sensors of the system; a stochastic estimator operable to receive measurement data from the sensors and, with reference to the system model, to generate a plurality of samples each representative of the state of the system; a rule set corresponding to the system model, defining, for each of a plurality of possible samples representing possible states of the system, information defining an action to be carried out in the system; and an action selector, operable to receive an output of the stochastic estimator and to select, with reference to the rule set, information defining one or more corresponding actions to be performed in the system.

Controller for partially observable systems

A high-speed field emission vacuum switching device comprises a cathode tip formed on a substrate, an extraction grid close to the cathode tip, and a modulator grid spaced from the cathode tip by a dielectric layer. The grids have apertures aligned with the cathode tip. An anode is spaced from the modulator grid by a dielectric layer. By use of the modulator grid, a substantial improvement in high-frequency switching performance can be achieved. A collector grid may be provided between the extraction grid and the modulator grid, and a cut-off grid may be disposed between the modulator and collector grids.

Electronic switching devices

An electron field emission device includes a field emissive cathode which may include a plurality of sharp field emitter tips 2. First and second grids 4 and 7 are located between the cathode and an anode. The grids comprise parallel strips of electrically conductive material, those of the first grid being arranged orthogonal to those of the second. Applications of suitable voltages to the grids enable selected regions of the cathode to be made electron emissive and produce collimated electron beams. The anode may be phosphor coated to produce a visible display or an infra-red image may be produced. Relatively low voltages may be used to switch the regions on and off. As the beams are collimated, the anode may be located a relatively large distance from the cathode, enabling high voltage phosphors to be used.

Electron field emission devices

In a method of forming a micron-size field emitter, an array of conductive tips is formed on a substrate. A layer of dielectric material is formed on the substrate to a thickness substantially equal to the height of the tips, but forming a protuberance over each tip. A conductive grid layer is deposited over the dielectric layer, forming corresponding protuberances, followed by a layer of resist material which is of sufficiently low viscosity so that it flows off the grid layer at the protuberances leaving the protuberances substantially unprotected. The grid and dielectric layers in the protuberances are then etched away to reveal the tips through the resulting apertures in the grid and dielectric layers. The apertures are thereby automatically aligned with the tips without the need for lithographic processes.

Field emission devices

In the production of micron-size pyramid emitters for field emission devices, a first layer of electrically-conductive material, such as single crystal silicon or metal, is etched to form column-like structures each of which tapers from each end of the column towards an intermediate portion along its length. A second conductive layer is formed in contact with the free ends of the columns, and etching of the columns is then resumed until the intermediate portion of each column is etched through, leaving a pair of pyramid emitters pointing towards one another and supported by the respective conductive layer.

Electronic devices

A klystron device comprises an array of cold-cathode field emission elements arranged to form a distributed amplifier which further comprises a modulation strip line and a catcher strip line. A collector electrode is spaced from the catcher strip line. The device may include a deflector for returning electrons emitted by the elements back to the modulation strip line so that the device acts as an oscillator.

In a method of forming a field-induced emission device, a cathode is provided on a substrate, for example by etching away the substrate to leave a pointed projection. The projection may be covered with a metallic layer to enhance the field-induced cathode emission. A first insulating layer is formed over the substrate, with an aperture therein corresponding to the cathode position. An apertured control grid layer is formed over the first insulating layer and an apertured second insulating layer is formed thereon. A tunnel formed by the apertures in the insulating and conductive layers is filled with a plug of soluble material. An anode strip is formed on the second insulating layer and over the plug, and the plug is then dissolved through gaps at the edges of the anode strip, thereby leaving an unsupported area of anode strip over the cathode. The tunnel may then be evacuated or may be filled with gas and the gaps at the edges of the anode strip will then be sealed to retain the vacuum or gas. If a diode structure is required, the control grid layer and the second insulating layer will be omitted. A switching device may be constructed by associating a number of the cathodes on the substrate with a common control grid and a common anode. The anode, grid and cathode structures may be so dimensioned as to form a transmission line.

Field induced emission devices and method of forming same

A vacuum valve device comprises a substrate on which is formed an updoped silicon layer from which a silicon dioxide layer is grown. First, second and third electrode structures are formed on the silicon dioxide layer by depositing a metallic layer and etching away unwanted portions of the layer. The first electrode structure has a pointed end and/or a sharp edge and/or is formed of low work function material so that, when a suitable voltage is applied between the first and third electrode structures, electrons are emitted from the first electrode structure due to a field emission process. Electrons therefore flow from the first to the third electrode structure substantially parallel to the substrate. The second electrode structure acts as a control electrode.

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Rickmansworth, United Kingdom

Neil A Cade