USA As Represented by Secretary of the Navy

Neeraj Nepal

Charles R Eddy, Jr

Syed B Qadri

Michael J Mehl

Francis J Kub

Travis J Anderson

Michael Anthony Mastro

Rachael L Myers-Ward

Virginia D Wheeler

Nadeemmullah A Mahadik

Sandra C Hangarter

David J Meyer

Brian P Downey

Nadeemullah A Mahadik

Matthew T Hardy

D Scott Katzer

Eric N Jin

Vikrant J Gokhale

Acoustic wave devices based on epitaxially grown heterostructures comprising appropriate combinations of epitaxially grown metallic transition metal nitride (TMN) layers, epitaxially grown Group III-nitride (III-N) piezoelectric semiconductor thin film layers, and epitaxially grown perovskite oxide (PO) layers. The devices can include bulk acoustic wave (BAW) devices, surface acoustic wave (SAW) devices, high overtone bulk acoustic resonator (HBAR) devices, and composite devices comprising HBAR devices integrated with high-electron-mobility transistors (HEMTs).

Multifunctional integrated acoustic devices and systems using epitaxial materials

Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300&#xb0; C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.

Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN films and its alloys with AIN at low temperatures

Described herein is a method for growing InN, GaN, and AlN materials, the method comprising alternate growth of GaN and either InN or AlN to obtain a film of InGaN, AlGaN, AlInN, or AlInGaN.

Epitaxial growth of cubic and hexagonal InN films and their alloys with AlN and GaN

A method of growing crystalline materials on two-dimensional inert materials comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material. A crystalline material grown on a two-dimensional inert material made from the process comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material.

Growth of crystalline materials on two-dimensional inert materials

Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN and its alloys with AIN at low temperatures

Growing community of inventors

Woodbridge, VA, United States of America

Neeraj Nepal