Taiwan Semiconductor Manufacturing Comp. Ltd.

Neena Avinash Gilda

Baohua Niu

Lien-Yao Tsai

The present disclosure provides a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device includes the following operations. An intermediate layer is formed in the semiconductor device. A field is applied to the intermediate layer, wherein the field source does not contact the semiconductor device. The polarity of the intermediate layer is changed by the field to form a desired dipole orientation in the intermediate layer.

Method and apparatus for manufacturing semiconductor device

The present disclosure provides a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device includes the following operations. An intermediate layer is formed in the semiconductor device. A voltage is applied to the intermediate layer. A unit cell of the intermediate layer is stretched or compressed by the voltage. The polarity of the intermediate layer is changed by the voltage.

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Hsinchu, Taiwan

Neena Avinash Gilda