Intel Corporation

Neeladri Sain

Yasir Mohsin Husain

Everardo Flores, Iii

A memory device comprising a plurality of first global access lines, second global access lines, first local access lines, and second local access lines; and a plurality of memory cells, wherein a memory cell is coupled to one of the first local access lines and one of the second local access lines. The memory device further comprises a plurality of signal lines to communicate local access line select signals to control a plurality of select devices, wherein a select device selectively couples one of the first global access lines to one of the first local access lines; and a NOR gate to accept the plurality of local access line select signals as inputs and generate a plurality of local access line deselect signals to control a plurality of deselect devices, wherein a deselect device selectively couples one of the first local access lines to a deselect voltage.

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Folsom, CA, United States of America

Neeladri Sain