Texas Instruments Corporation

Neel A Bhatt

Lin Li

William Robert Morrison

John Paul Campbell

Stephen Arlon Meisner

Alfred J Griffin, Jr

Kyle P Hunt

Lee Alan Stringer

Brian L Vialpando

Asadd M Hosein

Lisa A Fritz

Charles Leighton

Methods for removing contaminants from a semiconductor device that includes a plurality of aluminum-comprising bond pads on a semiconductor surface of a substrate. A plurality of aluminum-including bond pads are formed on the semiconductor surface of the substrate. A patterned passivation layer is then formed on the semiconductor surface, wherein the patterned passivation layer provides an exposed area for the plurality of bond pads. Wet etching with a basic etch solution is used to etch a surface of the exposed area of the aluminum-including bond pads, wherein the wet etching removes at least 100 Angstroms from the surface of the bond pads to form a cleaned surface.

Methods for removing contaminants from aluminum-comprising bond pads and integrated circuits therefrom

The disclosure provides a method for manufacturing a semiconductor device. The method, in one embodiment, includes forming semiconductor features () over a substrate (), and then forming a layer of material () over the semiconductor features (). This method further includes selectively etching portions of the layer of material () based upon a density or size of the semiconductor features () located thereunder, and then polishing remaining portions of the layer of material ().

Method for selectively etching portions of a layer of material based upon a density or size of semiconductor features located thereunder

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Allen, TX, United States of America

Neel A Bhatt