Texas Instruments Corporation

Neal T Murphy

Claire Ching-Shan Jung

Fuchao Wang

Jonathan Philip Davis

Brian E Zinn

Daryl Ross Koehl

Yousong Zhang

Donald J Rigsby, Jr

Danny F Mathews

Dok Won Lee

Mona M Eissa

Imran Khan

John Paul Campbell

David A Stark

Laurence D Schultz

An integrated magnetic device has a magnetic core which includes layers of the magnetic material located in a trench in a dielectric layer. The magnetic material layers are flat and parallel to a bottom of the trench, and do not extend upward along sides of the trench. The integrated magnetic device is formed by forming layers of the magnetic material over the dielectric layer and extending into the trench. A protective layer is formed over the magnetic material layers. The magnetic material layers are removed from over the dielectric layer, leaving the magnetic material layers and a portion of the protective layer in the trench. The magnetic material layers along sides of the trench are subsequently removed. The magnetic material layers along the bottom of the trench provide the magnetic core.

Magnetic core for integrated magnetic devices

Method to form magnetic core for integrated magnetic devices

A method of magnetic forming an integrated fluxgate sensor includes providing a patterned magnetic core on a first nonmagnetic metal or metal alloy layer on a dielectric layer over a first metal layer that is on or in an interlevel dielectric layer (ILD) which is on a substrate. A second nonmagnetic metal or metal alloy layer is deposited including over and on sidewalls of the magnetic core. The second nonmagnetic metal or metal alloy layer is patterned, where after patterning the second nonmagnetic metal or metal alloy layer together with the first nonmagnetic metal or metal alloy layer encapsulates the magnetic core to form an encapsulated magnetic core. After patterning, the encapsulated magnetic core is magnetic field annealed using an applied magnetic field having a magnetic field strength of at least 0.1 T at a temperature of at least 150&#xb0; C.

Magnetic field annealing for integrated fluxgate sensors

An integrated circuit with a high precision MIM capacitor and a high precision resistor with via etch stop landing pads on the resistor heads that are formed with the capacitor bottom plate material. A process of forming an integrated circuit with a high precision MIM capacitor and a high precision resistor where via etch stop landing pads over the resistor heads are formed using the same layer that is used to form the capacitor bottom plate.

Integration of precision MIM capacitor and precision thin film resistor

The present invention provides a system () for conditioning multi-component slurries utilized in chemical mechanical polishing (CMP) of semiconductor wafers (). The system provides a first slurry component (), and a second slurry component (). A conditioning component () has first and second inlets, and an outlet operatively coupled to a dispensing system (). First and second flow control components () are operably intercoupled between the first and second inlets and the first and second slurry components, respectively. The system further provides a megasonic energy source (), adapted to generate an energy field () across the conditioning component. A conveyance component () conducts the slurry components from the inlets through the energy field, and delivers a final mixture () of multi-component slurry to the outlet.

Versatile system for conditioning slurry in CMP process

A system and method are disclosed including a vapor dryer chamber ( ) with a lid ( ). A heater ( ) is disposed within the vapor dryer chamber to vaporize liquid drying medium ( ), preferably isopropyl alcohol, in the bottom of the vapor dryer chamber ( ). Cooling coils ( ) disposed within an upper portion of the vapor drying chamber ( ) condense the drying medium vapor. A vapor monitor assembly ( ) is disposed within the vapor dryer chamber ( ) to monitor the vapor concentration within vapor dryer chamber ( ). A controller ( ) is associated with the vapor monitor assembly ( ) and evaluates vapor concentration measurements from the vapor monitor ( ).

System and method for controlling a vapor dryer process

A method for resist strip and particle removal. Wafers ( ) with a patterned resist formed thereon are placed on a wafer chuck ( ) in a scrubber tool ( ). Ozonated deionized water ( ) is applied to the surface of wafer ( ). The ozonated deionized water ( ) strips the resist and removes the resist residue without the use of hazardous chemicals. Particle removal is accomplished in the same tool ( ). The ozonated deionized water ( ) is formed in a closed canister ( ). Deionized water is circulated through the canister ( ) and ozone is added to the deionized water at a premixer ( ).

Application of ozonated DI water to scrubbers for resist strip and particle removal processes

A method for resist strip and metal contamination removal. Wafers ( ) with a patterned resist formed thereon are subjected to an ozonated deionized water solution, such as mist ( ). The ozonated deionized water solution ( ) strips the resist and removes the resist residue. At the end of the process, HCl ( ) is added to the deionized water ( ) prior to forming the ozonated deionized water solution ( ) to remove metal contaminants.

Ozonated DI water process for organic residue and metal removal processes

A method and apparatus for resist strip. Wafers ( ) with a patterned resist formed thereon are placed in a carrier ( ) in a process chamber ( ). An ozonated deionized water mist ( ) is sprayed on the surface of wafer ( ). The ozonated deionized water mist ( ) strips the resist and removes the resist residue without the use of hazardous chemicals. The ozonated deionized water mist ( ) may be formed in an atomizer that mixes deionized water ( ) with ozone ( ). The ozonated deionized water mist ( ) is then sprayed onto the wafers ( ) while the wafers are being rotated.

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Richardson, TX, United States of America

Neal T Murphy