Applied Materials, Inc.

Ndanka O Mukuti

Juan Carlos Rocha-Alvarez

Zheng John Ye

Sanjeev Baluja

Ganesh Balasubramanian

Bok Hoen Kim

Thomas E Nowak

Dmitry A Dzilno

Juan Carlos Rocha

Daemian Raj Benjamin Raj

Shailendra Srivastava

Nikhil Sudhindrarao Jorapur

Tetsuya Ishikawa

Amit Kumar Bansal

Kwangduk Douglas Lee

Tom K Cho

Xinhai Han

Martin Jay Seamons

Ziqing Duan

Praket Prakash Jha

Zhijun Jiang

Sudhir R Gondhalekar

Masaki Ogata

Rolf A Guenther

Kaushik Comandoor Alayavalli

Sungwon Ha

Andrzej Kaszuba

Lei Jing

Andrzei Kaszuba

Thuy Britcher

Allen Ko

Shigeru Takehiro

Ngoc Le

Masayoshi Nohira

A method and apparatus for controlling RF plasma attributes is disclosed. Some embodiments of the disclosure provide RF sensors within processing chambers operable at high temperatures. Some embodiments provide methods of measuring RF plasma attributes using RF sensors within a processing chamber to provide feedback control for an RF generator.

Methods and apparatus for controlling RF parameters at multiple frequencies

A method and apparatus for a dual-channel showerhead is provided. In one embodiment the showerhead comprises a body comprising a conductive material having a plurality of first openings formed therethrough comprising a first gas channel and a plurality of second openings formed therethrough comprising a second gas channel that is fluidly separated from the first gas channel, wherein each of the first openings having a geometry that is different than each of the second openings.

Dual-channel showerhead for formation of film stacks

Embodiments described herein relate to a faceplate for improving film uniformity. A semiconductor processing apparatus includes a pedestal, an edge ring and a faceplate having distinct regions with differing hole densities. The faceplate has an inner region and an outer region which surrounds the inner region. The inner region has a greater density of holes formed therethrough when compared to the outer region. The inner region is sized to correspond with a substrate being processed while the outer region is sized to correspond with the edge ring.

Edge hump reduction faceplate by plasma modulation

Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other. The substrate processing tool may further comprise one or more reflectors adapted to generate a flood pattern of ultraviolet radiation over the substrate that has complementary high and low intensity areas which combine to generate a substantially uniform irradiance pattern if rotated. Other embodiments are also disclosed.

Apparatus and method for exposing a substrate to UV radiation while monitoring deterioration of the UV source and reflectors

A pump liner is used to direct a laminar flow of purge gas across a workpiece to remove contaminants or species outgassed or otherwise produced by the workpiece during processing. The pump liner can take the form of a ring having a plurality of injection ports, such as slits of a variety of shapes and/or sizes, opposite a plurality of receiving ports in order to provide the laminar flow. The flow of purge gas is sufficient to carry a contaminant or outgassed species from the processing chamber in order to prevent the collection of the contaminants on components of the chamber. The pump liner can be heated, via conduction and irradiation from a radiation source, for example, in order to prevent the condensation of species on the liner. The pump liner also can be anodized or otherwise processed in order to increase the emissivity of the liner.

Increased tool utilization/reduction in MWBC for UV curing chamber

The present invention is directed to the design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. In one embodiment, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a dome top and having a side portion defining a chamber diameter. A top RF coil is disposed above the dome top. A side RF coil is disposed adjacent the side portion of the dome. The side RF coil is spaced from the top RF coil by a coil separation. A ratio of the coil separation to the chamber diameter is at least about 0.15, more desirably about 0.2&#x2013;0.25.

High density plasma CVD chamber

Growing community of inventors

Santa Clara, CA, United States of America

Ndanka O Mukuti