Chippac, Inc.

Stats Chippac Pte. Ltd.

Pinnacle Research Institute, Inc.

Beijing Apollo Ding Rong Solar Technology Co., Ltd.

Apollo Precision Kunming Yuanhong Limited

Pacific Shinfu Technologies Co., Ltd.

Nazir Ahmad

Rajendra D Pendse

Kyung-Moon Kim

Young-Do Kweon

Samuel Waising Tam

Adam Sherman

Robert R Tong

James M Poplett

Jason Stephen Corneille

Ronald L Anderson

Michael Meyers

James P Nelson

Mark L Goodwin

Gary E Mason

K C Tsai

Alan B McEwen

Douglas Cromack

Davy Wu

Keh-Chi Tsai

Andrea Y Chen

Young Do Kweon

Provided are novel building integrable photovoltaic (BIP) modules and methods of fabricating thereof. A module may be fabricated from an insert having one or more photovoltaic cells by electrically interconnecting and mechanically integrating one or more connectors with the insert. Each connector may have one or more conductive elements, such as metal sockets and/or pins. At least two of all conductive elements are electrically connected to the photovoltaic cells using, for example, bus bars. These and other electrical components are electrically insulated using a temperature resistant material having a Relative Temperature Index (RTI) of at least about 115&#xb0; C. The insulation may be provided before or during module fabrication by, for example, providing a prefabricated insulating housing and/or injection molding the temperature resistant material. The temperature resistant material and/or other materials may be used for mechanical integration of the one or more connectors with the insert.

Electrical connectors of building integrable photovoltaic modules

A method for forming metallurgical interconnections and polymer adhesion of a flip chip to a substrate includes providing a chip having a set of bumps formed on a bump side thereof and a substrate having a set of interconnect points on a metallization thereon, providing a measured quantity of a polymer adhesive in a middle region of the chip on the bump side, aligning the chip with the substrate so that the set of bumps aligns with the set of interconnect points, pressing the chip and the substrate toward one another so that a portion of the polymer adhesive contacts the substrate and the bumps contact the interconnect points, and heating the bumps to a temperature sufficiently high to form a metallurgical connection between the bumps and the interconnect points.

Semiconductor device and method of forming a metallurgical interconnection between a chip and a substrate in a flip chip package

A method for forming metallurgical interconnections and polymer adhesion of a flip chip to a substrate includes providing a chip having a set of bumps formed on a bump side thereof and a substrate having a set of interconnect points on a metallization thereon, providing a measured quantity of a polymer adhesive in a middle region of the chip on the bump side, aligning the chip with the substrate so that the set of bumps aligns with the set of interconnect points, pressing the chip and the substrate toward one another so that a portion of the polymer adhesive contacts the substrate and the bumps contact the interconnect points, and heating the bumps to a temperature sufficiently high to form a metallurgical connection between the bumps and the interconnect points. Also, a flip chip package is made by the method. The metallurgical connection includes an alloy of gold and tin at the interface between the bumps and the interconnect points.

Interconnecting a chip and a substrate by bonding pure metal bumps and pure metal spots

A stud bump structure for electrical interconnection between a pair of members includes a base portion, and a stem portion. The base portion is affixed to a pad or trace in one of the pair of members to be interconnected (such as an integrated circuit chip), and the stem end is configured to contact a metal pad on the other member (such as a printed circuit board) to complete the interconnect. According to the invention, the stem end is truncated to form a transverse plane, and the stem is more compliant than the base. Also, a method for forming a stud bump on a contact surface, includes forming a bump base portion on the surface, drawing out a generally conical tail from a top of the base, and truncating the tail to form a stem portion having a planar transverse top surface and having a length from the top of the base portion to the top surface. In some embodiments the tail portion, at least, of the stud bump is formed using a wire bonding tool. Also, a method for forming an interconnect between a first member and a second member of an electronic package includes providing one of the members with the stud bumps of the invention and then bringing the corresponding bumps and pads together in a bonding process, the compliance of the stems portions of the bumps accommodating the variance from coplanarity of the pad surfaces.

Self-coplanarity bumping shape for flip-chip

Self-coplanarity bumping shape for flip chip

A flip chip package is formed by a solid-state bond technique for connecting the input/output pads on the integrated circuit chip and the package substrate. The solid-state bond technique involves a direct mating of metal surfaces, and does not employ any particulate conductive material nor any melting or flow of any interconnecting material. Accordingly the connections can be formed at very fine geometries. In another aspect, the space between the surface of the integrated circuit chip and the subjacent surface of the package substrate is filled with a patterned adhesive structure, which consists of one or more adhesive materials that are deployed in a specified pattern in relation to the positions of the second level interconnections between the package and the printed circuit board.

Chip scale package with flip chip interconnect

A dry preunit ( ), includes a plurality of cells ( ) in a true bipolar configuration, which are stacked and bonded together, to impart to the device an integral and unitary construction. Each cell ( ) includes two electrically conductive electrodes ( A, B) that are spaced apart by a predetermined distance. The cell ( ) also includes two identical dielectric gaskets ( ) that are interposed, in registration with each other, between the electrodes ( A, B), for separating and electrically insulating these electrodes. When the electrodes ( A, B), and the gaskets ( ) are bonded together, at least one fill gap ( ) is formed for each cell. Each cell ( ) also includes a porous and conductive coating layer ( ) that is formed on one surface of each electrode. The coating layer ( ) includes a set of closely spaced-apart peripheral microprotrusions ( ), and a set of distally spaced-apart central microprotrusions ( ). These microprotrusions ( ) impart structural support to the cells, and provide additional insulation between the electrodes. An energy storage device ( A) such as a capacitor, is created with the addition of an electrolyte to the gap ( ) of the dry preunit ( ) and subsequent sealing of the fill ports.

Method of making energy storage device having electrodes coated with insulating microprotrusions

A dry preunit (10), includes a plurality of cells (110, 112, 114) in a true bipolar configuration, which are stacked and bonded together, to impart to the device an integral and unitary construction. Each cell (114) includes two electrically conductive electrodes (111A, 111B) that are spaced apart by a predetermined distance. The cell (114) also includes two identical dielectric gaskets (121, 123) that are interposed, in registration with each other, between the electrodes (111A, 111B), for separating and electrically insulating these electrodes. When the electrodes (111A, 111B), and the gaskets (121, 123) are bonded together, at least one fill gap (130) is formed for each cell. Each cell (114) also includes a porous and conductive coating layer (119, 120) that is formed on one surface of each electrode. The coating layer (119) includes a set of closely spaced-apart peripheral microprotrusions (125), and a set of distally spaced-apart central microprotrusions (127). These microprotrusions (125, 127) impart structural support to the cells, and provide additional insulation between the electrodes. An energy storage device (10A) such as a capacitor, is created with the addition of an electrolyte to the gap (130) of the dry preunit (10) and subsequent sealing of the fill ports.

Energy storage device

Energy storage device and methods of manufacture

Growing community of inventors

San Jose, CA, United States of America

Nazir Ahmad