Toshiba Memory Corporation

Kioxia Corporation

Nayuta Kariya

Muneyuki Tsuda

A semiconductor memory device includes first conductive layers arranged in a first direction, a second conductive layer disposed at a position overlapping with the first conductive layers viewed from the first direction, a third conductive layer disposed at a position overlapping with the first conductive layers viewed from the first direction and arranged with the second conductive layer in a second direction intersecting with the first direction, a first semiconductor column opposed to the first conductive layers and the second conductive layer, a second semiconductor column opposed to the first conductive layers and the third conductive layer, and a fourth conductive layer disposed between the second conductive layer and the third conductive layer. The fourth conductive layer has a length in the second direction smaller than a length of the second conductive layer in the second direction and a length of the third conductive layer in the second direction.

Semiconductor memory device

A semiconductor memory device includes first conductive layers, second conductive layers, a semiconductor layer disposed between the first conductive layers and the second conductive layers, and a charge storage layer including a first part disposed between the first conductive layers and the semiconductor layer and a second part disposed between the second conductive layers and the semiconductor layer. This semiconductor memory device is configured to execute a first write operation in which a first program voltage is supplied to a third conductive layer which is one of the first conductive layers and a write pass voltage is supplied to a fourth conductive layer which is another of the first conductive layers, and a second write operation in which a second program voltage is supplied to the third conductive layer and to the fourth conductive layer.

According to one embodiment, first and second conductive layers are stacked in a first direction. The second conductive layers are spaced from the first conductive layers. Insulation regions are provided between the first and second conductive layers. A pillar is arranged between the first and second conductive layers and between the insulation regions. The pillar includes a charge storage film, a first insulation film, and a semiconductor layer, which are provided sequentially from the first conductive layers. A second insulation film is provided between the charge storage film and the first conductive layers. A portion of the charge storage film is provided between one of the insulation regions and the first conductive layers at an end of a portion where the first conductive layers and the pillar face each other.

According to one embodiment, a semiconductor memory device includes a substrate, a plurality of electrode films arranged along a first direction with an air gap interposed, the first direction crossing a surface of the substrate, a semiconductor member extending in the first direction, a charge storage member provided between the semiconductor member and each of the electrode films, and a high dielectric constant film provided along an outer surface of the air gap, a relative dielectric constant of the high dielectric constant film being higher than a relative dielectric constant of silicon oxide.

Growing community of inventors

Yokkaichi, Japan

Nayuta Kariya