Samsung Electronics Co., Ltd.

Nayoung Ji

Woojin Kim

Junghwan Moon

Junghoon Bak

Seowon Lee

A variable resistance memory device includes a first conductive line, a bipolar selection device on the first conductive line and electrically connected to the first conductive line, a second conductive line on the first conductive line and electrically connected to the bipolar selection device, a variable resistance layer on the second conductive line and electrically connected to the second conductive line, and a third conductive line on the variable resistance layer and electrically connected to the variable resistance layer.

Growing community of inventors

Suwon-si, South Korea

Nayoung Ji