Nxp B.v.

Naveen Agrawal

Piet Wessels

Gaurav Singh Bisht

Jayaraj Thillaigovindan

Jerome Dubois

Eric Ooms

Nico Berckmans

Michael John Ben Bolt

Jerome Guillaume Anna Dubois

Jie Liao

Khin Hoong Lim

A method of manufacturing a semiconductor device includes forming a trench that includes a needle defect, depositing a high density plasma oxide over the trench including the needle defect, removing the part of the high density oxide and the liner oxide over the needle defect by applying an oxide etch, and after the step of applying the oxide etch, etching back the needle defect by applying a polysilicon etch.

Method for reducing defects in shallow trench isolation

Disclosed is an integrated circuit die comprising an active substrate including a plurality of components laterally separated from each other by respective isolation structures, at least some of the isolation structures carrying a further component, wherein the respective portions of the active substrate underneath the isolation structures carrying said further components are electrically insulated from said components. A method of manufacturing such an IC die is also disclosed.

Integrated circuit and IC manufacturing method

Growing community of inventors

Rajasthan, India

Naveen Agrawal