Indian Institute of Science

Navakanta Bhat

Vinay Kumar

Bharadwaj Amrutur

Srinivasan Raghavan

Ranajit Sai

Rudra Pratap

Chandra Shekhar Prajapati

Mayank Shrivastava

Sugato Mukherjee

Rohith Soman

Ankit Soni

Patnam Krishnaswamy

Sampath Srinivasan

Pallavi Dasgupta

Nikhila Kashyap Dhanvantari Madhuresh

Neha Sakhuja

David Rakesh Gnana Jeyasingh

Thejas

Malhi Charanjeet Kaur

Ravindra Kumar Jha

Amit Kumar Mandal

Chakrapani Kalapu

Siva Rama Krishna Vanjari

Satyam Dwivedi

Vinoy Kalarickaparambil Joseph

Srinivasarao Ajjampur Shivshankar

Sangeneni Mohan

Kolla Lakshmi Ganapathi

Shubhadeep Bhattacharjee

Sayak Dutta Gupta

An example heterostructure semiconductor for sensing a gas comprises a substrate made of nanosheets of a compound of a first metal, wherein the compound of the first metal is sensitive to the gas to be sensed; one or more 1-Dimensional (1D) components fabricated on a surface of the substrate, the 1D components comprising a compound of a second metal, wherein the compound of the second metal is selective to the gas to be sensed; and a 2-Dimensional (2D) layer formed on the surface of the substrate in portions excluding the 1D components, wherein the 2D layer comprises compounds of the first and second metal. Method of fabrication of the heterostructure semiconductor and a chemiresistive sensor made thereof are also disclosed.

Heterostructure semiconductor, chemiresistive gas sensor made thereof, and method of fabrication thereof

Methods of fabrication and nano-sensor and nano-sensor array thereof are provided. A sensing electrode assembly can be patterned on a sacrificial layer of a substrate. The sensing electrode assembly can comprise a pair of contact pads and an electrode element coupled to and disposed between the pair of contact pads. The sensing electrode assembly can be formed on the patterned sensing electrode assembly. The sacrificial layer below a portion of the electrode element can be removed to obtain a suspended electrode element. The suspended electrode element can be oxidized at a first predetermined temperature to obtain a pair of electromigrated regions and a notch portion between the pair of the electromigrated regions. The notch portion can be used to detect a gaseous component in an ambient gas at a second predetermined temperature.

Methods of fabrication of nano-sensor and nano-sensor array

The present subject matter provides a High Mobility Electron Transistor (HEMT) comprising: a substrate, a nucleation layer provided on the substrate, a channel layer, and a buffer layer formed between the nucleation layer and the channel layer. The buffer layer comprises a vertical stack of p-n junctions. Each p-n junction of the vertical stack of p-n junctions comprises an n-type layer provided on a p-type layer. The n-type layer and the p-type layer are parallel to the substrate.

Stacked buffer in transistors

An electrochemically active, creatinine-binding device is provided to detect and measure quantitatively, creatinine in biological samples. The device of the present invention is also provided with a device to detect and measure quantitatively creatinine and albumin bioanalytes, simultaneously and to determine albumin to creatinine ratio (ACR). The present invention also provides an electrochemically active, creatinine-binding and albumin-binding device, for collection and retention of biological samples, having creatinine and albumin bioanalytes. In the present invention, a device holder is provided to receive the electrochemically active, creatinine-binding and albumin-binding device. The device, point-of-care biosensor and the method of the present invention, facilitate quantitative measurement of creatinine and albumin bioanalytes in urine and blood samples, and albumin to creatinine ratio (ACR), in urine samples, electrochemically, by determining redox current values.

Device and method for detecting creatinine and albumin to creatinine ratio

Methods and devices for quantifying creatinine in a test sample are provided. The test sample is contacted with a sensing composition to obtain a product comprising a hydantoin-transition metal complex and ammonia. The sensing composition comprises creatinine deaminase and a transition metal salt. The creatinine deaminase enzymatically reacts with creatinine to provide the N-methyl hydantoin and ammonia. The N-methyl hydantoin forms the hydantoin-transition metal complex with the transition salt. A potential difference is applied to the product to measure a current signal provided by the hydantoin-transition metal complex. Concentration of N-methyl hydantoin is obtained based on the measured current signal using a calibration equation. The concentration of N-methyl hydantoin is correlated with concentration of creatinine to quantify the creatinine in the test sample.

Electrochemical measurement of creatinine in serum

An electrochemically active device for collecting and retaining a biological sample with a bioanalyte, the device provided with at least a two-electrode member and an albumin-binding and an electrochemically active receptor in chemical contact with the two-electrode members and the biological sample. The present invention also provides a point-of-care biosensor with the device of the present invention and a method for measuring a bioanalyte in a biological sample. The device, point-of-care biosensor and the method of the present invention facilitate accurate measurements concentrations of urine albumin, human serum albumin (HSA), glycated albumin (GA) and methemalbumin (MHA) by determining redox current values in reduced volumes of biological samples.

Electrochemical biosensor and a method of sensing albumin and its complexes

An electrochemically active device is provided for collecting and retaining a blood sample with at least a two-electrode member connected to conductive tracks. A receptor with an integral receptor-membrane arranged on the two-electrode member, to receive non-electrochemically active heamoglobin bioanalyte and its complexes from red blood cells (RBC) of said blood sample, through a lysing agent and convert the non-electrochemically active heamoglobin bioanalyte and its complexes, into an electrochemically active bioanalyte and its electrochemically active complexes. The present invention also provides a point-of-care biosensor incorporated with the device of the present invention and method of measuring for the detection and quantitative measurement of concentrations of haemoglobin (Hb), glycated haemoglobin (GHb), methaemoglobin (MetHb) and myoglobin, in reduced volumes of blood samples, by determining redox current values in the reduced volumes of blood samples.

Device and method for detection of haemoglobin and its complexes

Nano-sensors, nano-sensor array and methods of fabrication thereof are provided. A nano-sensor comprises a pair of sensing electrode assemblies aligned longitudinally along a first axis. Each sensing electrode assembly comprises an electrode strip coupled to a contact pad at a first end of the electrode strip. A sensing member is disposed between the pair of sensing electrode assemblies to detect, at a predetermined temperature, presence of a gaseous component. A thermally conductive layer is provided in contact with the sensing member. The nano-sensor comprises a heating assembly, comprising a heating strip disposed between and coupled to a pair of heating contact pads, aligned longitudinally along a second axis substantially perpendicular to the first axis. A portion of the heating strip is in contact with the thermally conductive layer to heat the sensing member through the thermally conductive layer.

Nano-sensor for detecting gaseous components

The present disclosure provides an improved enhancement mode field effect transistor (FET) having an oxide (AlTiO) emulating p-type gate. The present disclosure provides a novel enhancement mode High Electron Mobility Transistor (HEMT) structure with AlTiO Gate Oxide Engineering as Replacement of p-GaN Gate. In an aspect, the present disclosure provides a hybrid gate stack that combines p-GaN technology with the proposed oxide for e-mode operation. The HEMT structure with AlTiO Gate oxide provides a threshold voltage tuning from negative to positive by changing p-doping composition. Using a developed p-type oxide, e-mode device shows ON current &#x2dc;400 mA/mm, sub-threshold slope of 73 mV/dec, R=8.9 &#x3a9;mm, interface trap density &#x3c;10mmeVand gate leakage below 200 nA/mm at the OFF-state breakdown.

Enhancement mode high electron mobility transistor (HEMT)

The field effect transistor (FET) of the present subject matter comprises a bottom gate electrode, a bottom gate dielectric provided on the bottom gate electrode, a channel layer provided on the bottom gate dielectric. A top portion comprising a source electrode, a drain electrode, a top gate electrode provided, and a top dielectric layer is provided on the channel layer. The channel layer forms Schottky barriers at points of contact with the source and the drain electrode. A back-gate voltage varies a height and a top-gate voltage varies a width of the Schottky barrier. The FET can be programmed to work in two operating modes-tunnelling (providing low power consumption) and thermionic mode (providing high performance). The FET can also be programmed to combine the tunnelling and thermionic mode in a single operating cycle, yielding high performance with low power consumption.

Programmable tunnel thermionic mode transistor

The present invention provides a high-frequency integrated device, comprising a substrate including at least an on-chip active and passive member and a ferrite layer bonded to the substrate through an interfacial bridge and substantially wrapping plurality of surfaces of said at least on-chip active and passive members. The present invention also provides a system incorporating the high-frequency integrated device of the present invention. The present invention further provides a process for the preparation of the high-frequency integrated device.

High-frequency integrated device with an enhanced inductance and a process thereof

A device and method for area sensing and actuation comprises highly scalable sensing and actuation network that can control a high density of sensing and actuation elements over a physical area. The device comprises a matrix of CMOS sensing chips that each comprise a plurality of sensing electrodes arranged in a matrix of columns and rows along horizontal wires and vertical wires. The vertical wires carry an activation signal to activate a column of sensing electrodes, and the vertical wires carry sensing and actuation signals between the column of sensing electrodes and a processing chip. The signals may be amplified by CMOS sensing chips between the source and destination of the signals. In this way, signals may be received from and sent to a dense matrix of sensing electrodes spanning a large geographic area with little or no degradation.

Surfaces with embedded sensing and actuation networks using complementary-metal-oxide-semiconductor (CMOS) sensing chips

An adaptive digital baseband receiver is described in which operating parameters of the receiver, such as bit-widths and operating frequencies, are determined that achieve a target bit-error-ratio (BER) as a function of received signal-to-noise ratio (SNR) and interference levels in a wireless channel and enable the receiver to consume a minimum amount of power. Over consumption of power may be avoided due to a functional relationship between optimal resolution and input signal conditions. In exemplary embodiments, the adaptive digital receiver is provided that adjusts bit-widths and operating frequency at power efficient levels while meeting a target BER. Simulations can be used to determine a relation between bit-width, operating frequency, and input signal conditions, for example.

Adaptive digital baseband receiver

Design of a disposable screen printed electrode (SPE) for sensing percentage glycated hemoglobin using electrochemistry is disclosed. SPE has four electrodes, one working electrode for the detection of glycated hemoglobin, one working electrode for the detection of hemoglobin and the other two electrodes are counter and reference electrodes that are common for both detection schemes. It also has a cellulose acetate membrane with lysis agents and surfactant embedded in it. Lysis agents lyse erythrocytes and release hemoglobin. Surfactants modify hemoglobin structure and enhance the rate the electron transfer and thereby the output signal during the electrochemical analysis. The SPE is low cost and user friendly. The only input from the user is a drop of blood.

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Bengaluru, India

Navakanta Bhat