The Furukawa Electric Co., Ltd.

Natsumi Ueda

Noriyuki Yokouchi

Tatsuyuki Shinagawa

Masato Tachibana

A surface emitting semiconductor laser device of oxidized-Al current confinement structure has a resonant wavelength of a fundamental transverse mode, which is set shorter than or equal to a peak-gain wavelength of the laser device at a specified temperature. The surface emitting semiconductor laser device emits in a single-transverse mode.

Surface emitting semiconductor laser device

A vertical cavity surface emitting laser (VCSEL) device includes a pair of diffusion Bragg reflectors (DBRs) sandwiching therebetween a multiple quantum well (MQW) comprising active layers. The bottom DBR includes a lower layer structure having AlAs layers having a higher thermal conductivity and AlGaAs layers in pair and an upper layer structure acting anti-oxidation layers and having a pair of AlGaAs layers having different Al contents. A selectively oxidized AlAs layer disposed as the top layer of the bottom DBR comprises an Al-oxidized area and a non-oxidized layer for confinement of current injection path.

Growing community of inventors

Tokyo, Japan

Natsumi Ueda