Namiki Seimitsu Houseki Kabushiki Kaisha

Disco Corporation

Natsuko Aota

Hideo Aida

Hitoshi Hoshino

Hidetoshi Takeda

Keiji Honjo

Mai Ogasawara

Provided is a composite substrate manufacturing method, including at least: a first raw board deforming step of preparing a first substrate by deforming a first raw board having at least one surface as a minor surface into a state in which the minor surface warps outward; and a joining step of joining, after the first raw board deforming step, a protruding surface of the first substrate and one surface of a second substrate to each other, thereby manufacturing a composite substrate including the first substrate and the second substrate, in which the second substrate is any one substrate selected from a substrate having both surfaces as substantially flat surfaces and a substrate that warps so that a surface thereof to be joined to the first substrate warps outward. Also provided are a semiconductor element manufacturing method, a composite substrate and a semiconductor element manufactured.

Composite substrate manufacturing method, semiconductor element manufacturing method, composite substrate, and semiconductor element

Provided are a single-crystal substrate for epitaxial growth on which a crystalline film may be formed with stress thereon being suppressed or eliminated, a single-crystal substrate having a crystalline film, a crystalline film, a method of producing a single-crystal substrate having a crystalline film, a method of producing a crystalline substrate, and an element producing method. The single-crystal substrate has a roughened surface formed on at least a partial region of a surface of the single-crystal substrate. And in order to obtain the single-crystal substrate having a crystalline film, a single-crystalline film is formed by epitaxial growth on a roughened-surface unformed surface on which the roughened surface is not formed, and a crystalline film having low crystallinity than the single-crystalline film is formed by epitaxial growth on a roughened-surface formed surface of the single-crystal substrate.

Single-crystal substrate,single-crystal substrate having crystalline film,crystalline film,method for producing single-crystal substrate having crystalline film,method for producing crystalline substrate,and method for producing element

Provided are a method of manufacturing a light-emitting element by which a light-emitting element () is manufactured through the following steps and a light-emitting element manufactured by employing the method. A light-emitting element layer () is formed on one face (T) of a monocrystalline substrate (A) for a light-emitting element. Next, the other face (B) of the monocrystalline substrate (A) for a light-emitting element is polished until a state where a vertical hole (A) penetrates the monocrystalline substrate (A) for a light-emitting element in its thickness direction is established. Next, a conductive material is filled into the vertical hole (B) from the side of the vertical hole (B) closer to an opening (B) in the other face (B) to form a conductive portion () that is continuous from a side closer to the light-emitting element layer () to the opening (B) in the other face (B).

Growing community of inventors

Tokyo, Japan

Natsuko Aota