Kwansei Gakuin Educational Foundation

Toyota Tsusho Corporation

Natsuki Yoshida

Kazufumi Aoki

Tadaaki Kaneko

A device for manufacturing a SiC substrate, in which formation of macro-step bunching is suppressed, comprises: a main body container that is capable of accommodating a SiC substrate and generates, by heating, a vapor pressure of gaseous species containing Si elements and gaseous species containing C elements, in an internal space; and a heating furnace that accommodates the main body container and performs heating so that a vapor pressure of the gaseous species containing Si elements is generated and a temperature gradient is formed, wherein the main body container has an etching space Sand a Si vapor supply source capable of supplying Si vapor into the main body container, the etching space Sbeing formed by making the SiC substrate face a portion of the main body container arranged on a lower-temperature side of the temperature gradient while the SiC substrate is disposed on a higher-temperature side of the temperature gradient.

Method and device for manufacturing sic substrate, and method for reducing macro-step bunching of sic substrate

An apparatus for producing an SiC substrate, by which an SiC substrate having a thin base substrate layer is able to be produced, while suppressing deformation or breakage, includes a main container which is capable of containing an SiC base substrate, and which produces a vapor pressure of a vapor-phase species containing elemental Si and a vapor-phase species containing elemental C within the internal space by means of heating; and a heating furnace which contains the main container and heats the main container so as to form a temperature gradient, while producing a vapor pressure of a vapor-phase species containing elemental Si within the internal space. The main container has a growth space in which a growth layer is formed on one surface of the SiC base substrate, and an etching space in which the other surface of the SiC base substrate is etched.

Method for manufacturing a SiC substrate by simultaneously forming a growth layer on one surface and etching another surface of a SiC base substrate

A device for manufacturing a SiC substrate, in which the occurrence of a work-affected layer is reduced, or from which a work-affected layer is removed, comprises: a main container which can accommodate a SiC substrate and which generates, by heating, a vapor pressure of a vapor-phase species including elemental Si and a vapor-phase species including elemental C in an internal space; and a heating furnace for accommodating the main container, generating a vapor pressure of the vapor-phase species including elemental Si in the internal space, and heating so that a temperature gradient is formed; the main container having an etching space formed by causing a portion of the main container disposed on the low-temperature side of the temperature gradient and the SiC substrate to face each other in a state in which the SiC substrate is disposed on the high-temperature side of the temperature gradient.

Growing community of inventors

Hyogo, Japan

Natsuki Yoshida