Rohm Co., Ltd.

Natsuki Sakamoto

Isamu Nishimura

Hideaki Yanagida

Hirofumi Takeda

Taro Hayashi

A semiconductor device includes: a substrate including a main surface; a wiring portion including a first conductive layer formed on the main surface, and a first plating layer which is provided on the first conductive layer and on which an oxide film is formed; a semiconductor element including an element mounting surface and an element electrode formed on the element mounting surface; a bonding portion including a second plating layer made of the same material as the first plating layer and laminated on the first conductive layer, and a solder layer laminated on the second plating layer and bonded to the element electrode; and a sealing resin covering the semiconductor element.

Growing community of inventors

Kyoto, Japan

Natsuki Sakamoto