Sony Corporation

Natsuki Otani

Takayuki Nakanishi

Masanobu Ikeda

Tsutomu Tanaka

Daisuke Takama

Ryoichi Ito

Yoshiharu Nakajima

Kenta Seki

Masafumi Kunii

A light sensor includes a control electrode formed on a substrate and having two edges, and a semiconductor film formed opposite the control electrode with an insulating film interposed therebetween, and including a photoactive layer and electrode regions located in a pair on opposite sides of the photoactive layer. The photoactive layer is arranged in an area that overlaps the control electrode. At least one of the paired electrode regions overlaps proximal one of the edges of the control electrode, and on and along the proximal edge, the at least one electrode region has a length shorter than that of the photoactive layer in a direction along the proximal edge of the control electrode.

Light sensor and display

Disclosed herein is a display apparatus including: a display panel having a plurality of picture elements configured to execute display by driving a liquid crystal layer; a backlight configured to illuminate a display surface of the display panel from a backside; a photodetector arranged on the plurality of picture elements and configured to receive a light entered from the side of the display surface of the display panel; and a detection block configured to execute image recognition in the proximity of the display surface from a difference between a photodetection amount in the photodetector in a state where an illuminating light from the backlight is radiated from the display surface and a photodetection amount in the photodetector in a state where the illuminating light is blocked before the display surface.

Display apparatus and display method

Disclosed herein is a display device that displays a desired image on an effective pixel area in which sub-pixels are arranged in a matrix, the display device including: an ambient light sensor configured to be provided in a predetermined sub-pixel in the effective pixel area, the ambient light sensor receiving ambient light and outputting a result of detection of an ambient light amount for adjustment of luminance of the image; and a hue correction mechanism configured to correct local hue change due to provision of the ambient light sensor in the predetermined sub-pixel.

Display device and method for luminance adjustment of display device

Disclosed herein is a display device having an insulating substrate, an effective pixel area formed on the insulating substrate and having at least pixels arranged in the form of a matrix, and a peripheral circuit formed on the insulating substrate so as to surround the effective pixel area, the pixels being driven by the peripheral circuit to display a desired image in the effective pixel area, the display device including an extraneous light sensor provided in the effective pixel area for detecting extraneous light to output an extraneous light quantity detection result for use in controlling the luminance of the image.

Display device and luminance control method therefor

A display includes: a substrate having a pixel region and a sensor region in which photo-sensor parts are formed; an illuminating section operative to illuminate the substrate from one surface side of the substrate; a thin film photodiode disposed in the sensor region, having at least a P-type semiconductor region and an N-type semiconductor region, and operative to receive light incident from the other surface side of the substrate; and a metallic film formed on the one surface side of the substrate so as to face the thin film photodiode through an insulator film, operative to restrain light generated from the illuminating section from being directly incident on the thin film photodiode from the one surface side, and fixed to a predetermined potential, wherein in the thin film photodiode, the width of the P-type semiconductor region and the width of the N-type semiconductor region are different from each other.

Display device having a photodiode whose p region has an edge width different than that of the n region

A light-receiving element includes: a first-conductivity-type semiconductor region configured to be formed over an element formation surface; a second-conductivity-type semiconductor region configured to be formed over the element formation surface; an intermediate semiconductor region configured to be formed over the element formation surface between the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region, and have an impurity concentration lower than impurity concentrations of the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region. The light-receiving element further includes: a first electrode configured to be electrically connected to the first-conductivity-type semiconductor region; a second electrode configured to be electrically connected to the second-conductivity-type semiconductor region; and a control electrode configured to be formed in an opposed area that exists on the element formation surface.

Growing community of inventors

Kanagawa, Japan

Natsuki Otani