Ebara Corporation

Other

Kabushiki Kaisha Toshiba

Kabushiki Kaisha Yaskawa Denki

Sumitomo Bakelite Company Limited

Natsuki Makino

Junji Kunisawa

Koji Mishima

Seiji Katsuoka

Takahiro Ogawa

Kenichi Kobayashi

Osamu Nabeya

Hiroyuki Shinozaki

Naoki Matsuda

Kenji Nakamura

Hiroaki Inoue

Mitsuru Miyazaki

Hiroshi Sotozaki

Shinya Morisawa

Norio Kimura

Hisashi Kaneko

Tetsuo Matsuda

Mitsuko Odagaki

Toshiyuki Morita

Katsuya Okumura

Nobuo Hayasaka

Manabu Tsujimura

Moriji Matsumoto

Takahiro Nanjo

Kunihito Ide

Keisuke Namiki

Hiroyuki Kanda

Daisuke Fujiwara

Hidenao Suzuki

Hidetaka Nakao

Hiroki Sanemasa

Masayoshi Kondo

Hideo Yamamoto

Yuka Ito

Kazufumi Nomura

Naoomi Torii

Katsuyuki Musaka

Naoki Mihara

An apparatus for processing a substrate is disclosed. The apparatus includes a polishing section configured to polish a substrate, a transfer mechanism configured to transfer the substrate, and a cleaning section configured to clean and dry the polished substrate. The cleaning section has plural cleaning lines for cleaning plural substrates. The plural cleaning lines have plural cleaning modules and plural transfer robots for transferring the substrates.

Substrate processing apparatus, substrate processing method, substrate holding mechanism, and substrate holding method

A circuit board () exhibits an average coefficient of thermal expansion (A) of the first insulating layer () in the direction along the substrate surface in a temperature range from 25 degrees C. to its glass transition point of equal to or higher than 3 ppm/degrees C. and equal to or lower than 30 ppm/degrees C. Further, an average coefficient of thermal expansion (B) of the second insulating layer () in the direction along the substrate surface in a temperature range from 25 degrees C. to its glass transition point is equivalent to an average coefficient of thermal expansion (C) of the third insulating layer () in the direction along the substrate surface in a temperature range from 25 degrees C. to its glass transition point. (B) and (C) are larger than (A), and a difference between (A) and (B) and a difference between (A) and (C) are equal to or higher than 5 ppm/degrees C. and equal to or lower than 35 ppm/degrees C.

Circuit board, semiconductor device, process for manufacturing circuit board and process for manufacturing semiconductor device

A handis constituted by a hand baseserving as a base portion, a rocking handdisposed to be superposed on the hand baseand serving to support a substrate, and a rocking mechanismprovided between the hand baseand the rocking handand serving to support the rocking handto be tiltable and movable in parallel with respect to the hand base

Hand having rocking mechanism and substrate delivering device having the same

A plating apparatus can form a plated film having a uniform thickness over the entire surface of a substrate without a change of members. The plating apparatus includes a substrate holder, a cathode contact for contacting a conductive film formed on the substrate so that the conductive film serves as a cathode, a ring-shaped seal member for covering the cathode contact and bringing its inner circumferential portion into contact with the peripheral portion of the substrate to seal the peripheral portion of the substrate, an anode disposed so as to face the conductive film formed on the substrate, and an auxiliary cathode disposed with respect to the seal member such that at least part of the auxiliary cathode is exposed on a surface of the seal member. Plating is carried out by bringing the conductive film, the anode and the auxiliary cathode into contact with a plating solution.

Plating apparatus

An electrolytic processing apparatus according to an embodiment of the present invention includes: a substrate holder for holding a substrate; a first electrode to make contact with the substrate for passing electricity to a processing surface of the substrate; an electrode head including a high resistance structure and a second electrode, disposed opposite to and in this order from the substrate holder, and a polishing surface facing the processing surface of the substrate held by the substrate holder; an electrolytic solution injection portion for injecting an electrolytic solution between the processing surface of the substrate held by the substrate holder and the second electrode; a relative movement mechanism for moving the substrate holder and the electrode head relative to each other; a press mechanism for pressing the polishing surface of the electrode head against the substrate held by the substrate holder; and a power source for applying a voltage between the first electrode and the second electrode. The power source is capable of selectively switching the direction of electric current.

Electrolytic processing apparatus and method

A plating method and apparatus for a substrate fills a metal, e.g., copper, into a fine interconnection pattern formed in a semiconductor substrate. The apparatus has a substrate holding portionhorizontally holding and rotating a substrate with its surface to be plated facing upward. A seal materialcontacts a peripheral edge portion of the surface, sealing the portion in a watertight manner. A cathode electrodepasses an electric current upon contact with the substrate. A cathode portionrotates integrally with the substrate holding portionAn electrode arm portionis above the cathode portionand movable horizontally and vertically and has an anodeface-down. Plating liquid is poured into a space between the surface to be plated and the anodebrought close to the surface to be plated. Thus, plating treatment and treatments incidental thereto can be performed by a single unit.

Method of performing electrolytic treatment on a conductive layer of a substrate

The present invention provides an electrolytic processing apparatus which is capable of increasing an in-plane uniformity of a film thickness of a plated film by making more uniform an electric field distribution over an entire surface to be processed of a substrate even if the substrate has a large area, and controlling more uniformly a speed, over the entire surface to be processed of the substrate. The electrolytic processing apparatus of this invention includes: a substrate holder for holding a substrate, a first electrode for being brought into contact with the substrate to supply current to a surface, to be processed, of the substrate; a second electrode disposed substantially parallel to the surface, to be processed, of the substrate in a position facing the surface, to be processed, of the substrate held by the substrate holder; a high resistance structure disposed between the substrate held by the substrate holder and the second electrode; an electrolytic solution introducing portion for introducing an electrolytic solution into a region across which the substrate held by the substrate holder and the high resistance structure face each other, from laterally of the high resistance structure; and a power source for applying a voltage between the first electrode and the second electrode.

Electrolytic processing apparatus and substrate processing method

A substrate processing apparatus fills a metal such as copper or the like in fine interconnection patterns or trenches defined in a semiconductor substrate. The substrate processing apparatus has a loading/unloading unit for placing a substrate cassette to allow a substrate to be loaded and unloaded, a substrate treating unit for treating a substrate, and a transfer robot for transferring a substrate between the loading/unloading unit and the substrate treating unit. The loading/unloading unit, the substrate treating unit, and the transfer robot are installed in a single facility. The loading/unloading unit has a rotary table which is horizontally rotatable for positioning the substrate cassette in a position to detect the substrate cassette placed in the loading/unloading unit and to remove the substrate from the substrate cassette with the transfer robot.

Substrate processing apparatus and substrate plating apparatus

In an electroplating apparatus, an electrolytic agent is filled into the portion between an anode and a dummy cathode which is opposite substantially face to face and parallel to the anode, and an electric current is supplied to this portion, thereby suppressing changes in properties of a black film during the period in which plating to a substrate to be processed is stopped. In particular, by applying an electric current to the anode immediately before plating to the substrate is resumed, the film formation characteristics of plating to the substrate can be maximally stabilized. This can reduce the consumption power and dissolution of the anode. This apparatus is particularly effective in copper plating in which the formation of a black film is significant.

Electroplating apparatus and electroplating method

The present invention relates to a plating method and a plating apparatus which can attain embedding of copper into fine interconnection patterns with use of a plating liquid having high throwing power and leveling properties, and which can make film thickness of a plated film substantially equal between an interconnection region and a non-interconnection region. A plating method comprises filling a plating liquid containing metal ions and an additive into a plating space formed between a substrate and an anode disposed closely to the substrate so as to face the substrate, and changing concentration of the additive in the plating liquid filled into the plating space during a plating process.

Plating method and plating apparatus

Growing community of inventors

Tochigi, Japan

Natsuki Makino