Ulvac, Inc.

Natsuki Fukuda

Koukou Suu

Yutaka Nishioka

Kazumasa Horita

Shin Kikuchi

Kazunori Fukuju

Youhei Ogawa

To provide a resistance change device that can be protected from an excess current without enlarging a device size. A resistance change deviceaccording to the present embodiment includes a lower electrode layer, an upper electrode layer, a first metal oxide layer, a second metal oxide layer, and a current limiting layer. The first metal oxide layeris disposed between the lower electrode layerand the upper electrode layer, and has a first resistivity. The second metal oxide layeris disposed between the first metal oxide layerand the upper electrode layer, and has a second resistivity higher than the first resistivity. The current limiting layeris disposed between the lower electrode layerand the first metal oxide layer, and has a third resistivity higher than the first resistivity and lower than the second resistivity.

Resistance change device, and method for producing same

To provide a resistance change element which does not require a forming process and enables reduction of power consumption and miniaturization of the element, and to provide a method for producing it. A resistance change elementaccording to an embodiment of the present invention includes a bottom electrode layer, a top electrode layerand an oxide semiconductor layer. The oxide semiconductor layerhas a first metal oxide layerand a second metal oxide layer. The first metal oxide layeris formed between the bottom electrode layerand the top electrode layer, and in ohmic contact with the bottom electrode layer. The second metal oxide layeris formed between the first metal oxide layerand the top electrode layer, and in ohmic contact with the top electrode layer.

Resistance change element and method for producing the same

[Object] To provide a method and an apparatus for manufacturing a variable resistance element by which a metal oxide layer having a desired resistivity can be precisely formed. [Solving Means] The method of manufacturing the variable resistance element according to an embodiment of the present invention includes a step of forming a first metal oxide having a first resistivity and a step of forming a second metal oxide having a second resistivity different from the first resistivity. The first metal oxide is formed on a substrate by sputtering, while sputtering a first target made of an oxide of metal, a second target made of the metal with a first power. The second metal oxide layer is formed on the first metal oxide layer by sputtering the second target with a second power different from the first power while sputtering the first target.

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Shizuoka, Japan

Natsuki Fukuda