Micron Technology Incorporated

Nathaniel Wessel

Johnny A Lam

Byron D Harris

Oyvind Haehre

Various embodiments provide for deferring adjustment of a zone in a memory system or sub-system that supports zones. In particular, some embodiments provide for deferred adjustment of a zone based on detection of an error in a block of an unassigned block set, which can be tracked using a counter.

Deferred zone adjustment in zone memory system

Implementations described herein relate to memory devices including a single-level cell (SLC) block storing data for migration to multiple multi-level cell (MLC) blocks. In some implementations, a memory device includes multiple MLC blocks that include MLCs, with each MLC being capable of storing at least four bits of data, and multiple SLC blocks that can store data prior to the data being written to one of the MLC blocks. Each SLC block may be capable of storing different data sets that are destined for storage in different MLC blocks. The memory device may include a mapping component that can store a mapping table that includes multiple entries, in which an entry indicates a mapping between a memory location in the SLC blocks and a corresponding MLC block for which data stored in the memory location is destined. Numerous other implementations are described.

Growing community of inventors

Longmont, CO, United States of America

Nathaniel Wessel