Sarnoff Corporation

Dialog Semiconductor Gmbh

Digital Imaging Systems Gmbh

Dialog Imaging Systems Gmbh

Dialog Imaging System Gmbh

Nathaniel Joseph McCaffrey

Peter Alan Levine

Taner Dosluoglu

Donald J Sauer

John Robertson Tower

Gary Hughes

Peter Zalud

Francis Paul Pantuso

Pradyumna Kumar Swain

Ramon Ubaldo Martinelli

John Thomas Kalinowski

Kantilal Patel

Scott Thomas Smith

Robert James Andreas

A new method of reading an imager is achieved. The method comprises providing an imager array comprising n rows and m columns where a pair of rows can be read during a single row access time. A first image field is completed by sequentially reading and storing pixel values of pairs of adjacent rows of the imager array. The reading begins at a first row, and the reading stops when less than three rows are unread. Thereafter pixel values of the next row are read and not stored. Thereafter pixel values of the first row of the imager array are read and not stored. A second image field is completed by sequentially reading and storing pixel values of pairs of adjacent rows. The reading begins at the second row, the reading stops when less than two rows are unread.

Simultaneous readout of CMOS APS imagers

A pixel circuit with a dual gate PMOS is formed by forming two Pregions in an Nwell. The Nwell is in a Ptype substrate. The two Pregions form the source and drain of a PMOS transistor. The PMOS transistors formed within the Nwell will not affect the collection of the photo-generated charge as long as the source and drain potentials of the PMOS transistors are set at a lower potential than the Nwell potential so that they remain reverse biased with respect to the Nwell. One of the Pregions used to form the source and drain regions can be used to reset the pixel after it has been read in preparation for the next cycle of accumulating photo-generated charge. The Nwell forms a second gate for the dual gate PMOS transistor since the potential of the Nwellaffects the conductivity of the channel of the PMOS transistor. The addition of two NMOS transistors enables the readout signal to be stored at the gate of one of the NMOS transistors thereby making a snapshot imager possible. The circuit can be expanded to form two PMOS transistors sharing a common drain in the Nwell.

CMOS pixel with dual gate PMOS

A new multiple imager array device is achieved. The device comprises, first, a bi-directional bus. An array of imagers is arranged in n rows and m columns. The n and m are positive integers. Each imager is connected to the bi-directional bus. A line of bits of any imager is accessible by a line address. Each imager has a Vmode input and an output enable input. The Vmode input and the output enable input must be enabled to allow accessing. A first multiplexer has an input and a plurality of outputs. The input is connected to a column counter. Each output is connected to the output enable input of one of the imagers. A second-multiplexer has an input and a plurality of outputs. The input is connected to a row counter. Each output is connected to the Vmode input of each imager in one of the rows.

Multiplexing prism CMOS imagers to a single data bus

An optical sensor circuit for generating signals corresponding to received photoelectrons is formed on a single monolithic substrate and includes a charge coupled device (CCD) array. The array is formed of a plurality of pixels constructed by a standard CMOS process. Each pixel is formed of at least one charge well of minority carriers and a gate oxide layer overlaying the at least one charge well. At least two spaced gate electrodes corresponding in position to the at least two charge wells overlays the gate oxide layer. The space between adjacent electrodes defines a gap to transfer charge between adjacent ones of at the least two spaced gate electrodes and the gap is stabilized. A back-illuminated imager is also described in which photocarriers are diverted from devices integrated with the pixel by a PN junction formed in the pixel structure.

CCD imager constructed with CMOS fabrication techniques and back illuminated imager with improved light capture

A video imaging system includes an imaging array having a plurality of picture elements (pixels) formed in a substrate. An analog to digital converter formed in the substrate converts signals from the pixels into digital pixel signals. A defect detection circuit formed in said substrate provides a defective pixel output signal indicating, as the digital pixel signal corresponding to the pixels is processed, if any one pixel of the plurality of pixels in the imaging array is defective. The video imaging system includes a defect substitution circuit, also formed in the substrate, that substitutes a corrected pixel for any defective pixel. The video imaging system is responsive to a gain control signal to adjusts the pixels in magnitude. The gain control signal is applied to the first circuit to control the analysis of the pixel to determine if it is defective.

Addressable imager with real time defect detection and substitution

There is shown an single chip CMOS device for capturing a video image. The device includes an APS imager containing an array of pixels for providing a signal representing a scene, a row of extended dynamic range sample and hold circuits for receiving a signal from the array of pixels and a row of linear sample and hold circuits for receiving another signal for said array of pixels. Also included is an image processor for determining a controllable function and for processing a plurality of signals received from the extended dynamic range sample and hold circuits and the linear sample and hold circuits according to said controllable function to form a processed video signal. Further included is a memory for storing the controllable function and the processed video signal.

Fully integrated solid state imager and camera display

A new electronic imaging system is achieved. The system comprises a sensor having a first color region, a second color region, and a third color region. A prism system comprises a first prism having a first index of refraction and overlying the first color region. The first prism directs incident light of the first color to the first color region of the sensor. A second prism has a second index of refraction and overlies the second color region. The second prism directs incident light of the second color to the second color region of the sensor. A third prism has a third index of refraction and overlies the third color region. The third prism directs incident light of the third color to the third color region of the sensor.

Auto registered component RGB imaging method

A CMOS pixel responsive to different colors of optical radiation without the use of color filters is described. A deep N well is formed in a P type silicon substrate. An N well is then formed at the outer periphery of the deep N well to form a P well within an N well structure. Two Nregions are formed in the P well and at least one Pregion is formed in the N well. A layer of gate oxide and a polysilicon electrode is then formed over one of the Nregions. The PN junction between the deep N well and the P type silicon substrate is responsive to red light. The PN junction between the deep N well and the P well is responsive to red light. The PN junction between the P well and the Nregion which is not covered by polysilicon and the PN junction formed by the N well and the Pregion are responsive to green or blue light. The PN junction formed by the junction between the P well and the Nregion which is covered by polysilicon is responsive to green light. The green signal is subtracted from the blue/green signal to produce a blue signal.

CMOS pixel using vertical structure and sub-micron CMOS process

A method and apparatus for resolving relative times-of-arrival of a plurality of light pulses includes a plurality of drift-field detectors. Each drift-field detector includes a light sensor and a semiconductor drift region. Each light sensor generates an electrical charge from at least one of the plurality of light pulses. Each semiconductor drift region receives the electrical charge from its respective light sensor and, pursuant to an electric field therein, produces a spatial charge distribution. The spatial charge distribution for each of the semiconductor drift regions is stored in an analog storage device associated therewith. The relative positions of the charge distributions in the semiconductor drift regions are used to calculate the relative times-of-arrival of the light pulses.

Method and apparatus for resolving relative times-of-arrival of light pulses

A three-dimensional imaging range finder is disclosed using a transmitted pulse reflected from a target. The range finder includes a pixel sensor for receiving light from the target and the reflected pulse. A global counter is provided for determining a time-of-flight value of the transmitted pulse by providing accurate count data to pixel memories. A processing circuit, which is coupled to the pixel sensor and the global counter, extracts the reflected pulse received by the pixel sensor, and stores the time-of-flight value upon extracting the reflected pulse. The pixel sensor provides a luminance signal and the processing circuit includes a high pass filter to extract the reflected pulse from the luminance signal.

High resolution 3-D imaging range finder

A novel method and apparatus is disclosed that is able to extend the intra-scene dynamic range of Time Delay and Integrate Charge-Coupled Device imagers. In accordance with the principles of the invention, the charge collected and accumulated over a plurality of photosensitive devices is limited by adjusting the barrier levels at which collected accumulated charge is removed from the photosensitive devices. By limiting the amount of accumulated charge that is collected, images of high intensity are prevented from overflowing or saturating the photosensitive devices. Thus, information that is included in the brighter levels of the image is not lost because of clipping the photosensitive device to prevent saturation. In one embodiment of the invention, the blooming barrier levels are adjusted in a step-wise linear manner to allow a known amount of charge to be retained during the initial collection phase while allowing progressively greater amounts of charge to be retained as the collection phase proceeds. This stepped increase in barrier level causes the imager to compress highly intense images to prevent saturation during the initial collection phase, while not influencing the response to images of lower intensity.

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Stockton, NJ, United States of America

Nathaniel Joseph McCaffrey