The State University of New York

Tokyo Electron Limited

United States of America as Represented by the Secretary of the Air Force

Nathaniel C Cady

Karsten Beckmann

Sergey Alexandrovich Voronin

Shyam Sridhar

Qi Wang

Joseph E Van Nostrand

Magnus Bergkvist

Alison Gracias

Seann M G Bishop

Martin Rodgers

Nathan McDonald

Bryant T Wysocki

A selector device includes a first electrode composed of a first metal having a first work function. A second electrode is composed of a second metal having a second work function. A selector layer is disposed between the first and second electrodes and is composed of a dielectric material having a conduction band and a valence band defining a band gap of at least 5 electron volts. Dopant atoms are disposed in the selector layer to form a sub-conduction band that is below the conduction band and above the work functions. When a threshold voltage is applied across the first and second electrodes, and a magnitude of the threshold voltage exceeds an energy difference between the sub-conduction band and the work functions, but does not exceed an energy difference between the conduction band and the work functions, an on-current will conduct through the selector layer.

Selector devices for a memory cell

The performance of a ReRAM structure may be stabilized by utilizing a dry chemical gas removal (or cleaning) process to remove sidewall residue and/or etch by-products after etching the ReRAM stack layers. The dry chemical gas removal process decreases undesirable changes in the ReRAM forming voltage that may result from such sidewall residue and/or etch by-products. Specifically, the dry chemical gas removal process may reduce the ReRAM forming voltage that may otherwise result in a ReRAM structure that has the sidewall residue and/or etch by-products. In one embodiment, the dry chemical gas removal process may comprise utilizing a combination of HF and NHgases. The dry chemical gas removal process utilizing HF and NHgases may be particularly suited for removing halogen containing sidewall residue and/or etch by-products.

Methods for resistive RAM (ReRAM) performance stabilization via dry etch clean treatment

Apparatus for generating a truly random binary bit value in which the resistance of memristive devices serve as the analogue bit values. Resistance values and the randomness by which they are generated stems from the inherently non-uniform, irreproducible variations in the materials of which the system is composed.

Hardware based random number generator

Polymer-based micro-cantilevers for depositing material onto a surface include, in one embodiment, a body portion, an elongated beam portion sized smaller than and extending from the body portion and having a length greater than about 500 microns. The body portion includes a reservoir and the elongated beam portion having a passageway disposed therein. The passageway has an inlet opening in fluid communication with the reservoir and an outlet opening at a distal end of the elongated beam portion. The passageway comprises a width greater than 10 microns to about 100 microns, and a height of about 25 microns to about 100 microns. Methods for delivering fluid and living cells using the polymer-based micro-cantilevers are also disclosed.

Polymeric micro-cantilevers for ultra-low volume fluid and living cell deposition

Growing community of inventors

Delmar, NY, United States of America

Nathaniel C Cady