Intel Corporation

Nathaniel August

Liqiong Wei

Yih Wang

Fatih Hamzaoglu

Cyrille Dray

Blake C Lin

Hyung-Jin Lee

Stefan Rusu

Muhammad M Khellah

James W Tschanz

Charles Augustine

Carlos Alfonso Tokunaga

Pulkit Jain

Muhammed Elgousi

Benjamin Gordon

Tsai-Yuan Chen

Rangharajan Venkatesan

Both before and after a surprise clock stop, the apparatus and method of various embodiments supplies a stable and continuous clock to a memory module with a unique arrangement of circuit components, including a clock detector circuit, a clock-smoothing circuit, and one or more PLLs. Upon detection of a stopped host clock, a first PLL seamlessly switches to an alternate reference clock from an on-board crystal oscillator. A clock smoothing circuit allows the first PLL to maintain a steady phase and frequency without inducing glitches or period excursions greater than the natural jitter of the locked PLL; one or more optional downstream PLLs may drive additional clock domains.

Apparatus and method to maintain stable clocking

Described are apparatuses for improving resistive memory energy efficiency. An apparatus performs data-driven write to make use of asymmetric write switch energy between write0 and write1 operations. The apparatus comprises: a resistive memory cell coupled to a bit line and a select line; a first pass-gate coupled to the bit line; a second pass-gate coupled to the select line; and a multiplexer operable by input data, the multiplexer to provide a control signal to the first and second pass-gates or to write drivers according to logic level of the input data. An apparatus comprises circuit for performing read before write operation which avoids unnecessary writes with an initial low power read operation. An apparatus comprises circuit to perform self-controlled write operation which stops the write operation as soon as bit-cell flips. An apparatus comprises circuit for performing self-controlled read operation which stops read operation as soon as data is detected.

Apparatus for low power write and read operations for resistive memory

Described are apparatuses for improving resistive memory energy efficiency. An apparatus performs data-driven write to make use of asymmetric write switch energy between writeand writeoperations. The apparatus comprises: a resistive memory cell coupled to a bit line and a select line; a first pass-gate coupled to the bit line; a second pass-gate coupled to the select line; and a multiplexer operable by input data, the multiplexer to provide a control signal to the first and second pass-gates or to write drivers according to logic level of the input data. An apparatus comprises circuit for performing read before write operation which avoids unnecessary writes with an initial low power read operation. An apparatus comprises circuit to perform self-controlled write operation which stops the write operation as soon as bit-cell flips. An apparatus comprises circuit for performing self-controlled read operation which stops read operation as soon as data is detected.

Apparatuses for improving resistive memory energy efficiency are provided. An apparatus performs data-driven write to make use of asymmetric write switch energy between write0 and write1 operations. The apparatus comprises: a resistive memory cell coupled to a bit line and a select line; a first pass-gate coupled to the bit line; a second pass-gate coupled to the select line; and a multiplexer operable by input data, the multiplexer to provide a control signal to the first and second pass-gates or to write drivers according to logic level of the input data. An apparatus comprises circuit for performing read before write operation which avoids unnecessary writes with an initial low power read operation. An apparatus comprises circuit to perform self-controlled write operation which stops the write operation as soon as bit-cell flips. An apparatus comprises circuit for performing self-controlled read operation which stops read operation as soon as data is detected.

Described is an apparatus including memory cell with retention using resistive memory. The apparatus comprises: memory element including a first inverting device cross-coupled to a second inverting device; a restore circuit having at least one resistive memory element, the restore circuit coupled to an output of the first inverting device; a third inverting device coupled to the output of the first inverting device; a fourth inverting device coupled to an output of the third inverting device; and a save circuit having at least one resistive memory element, the save circuit coupled to an output of the third inverting device.

Memory cell with retention using resistive memory

Described are apparatuses for time domain offset cancellation. One example of the apparatus includes: a variable resistance memory cell; a reference resistive memory cell; a detector to generate an output indicating timing relationship between a pulse arriving from the variable resistance memory cell and a pulse arriving from the reference resistive memory cell; and a logic unit to receive the output from the detector and to generate a control signal to the adjust timing relationship as indicated by the detector.

Apparatus for time domain offset cancellation to improve sensing margin resistive memories

In some embodiments, detecting resistance in a resistive memory cell may be done using a pulse edge. For example, a pulse may be applied through a resistive memory data cell and another through a reference delay circuit to determine which path has the larger delay in order to determine the resistive state of the data cell in question.

Method and apparatus for reading variable resistance memory elements

In some embodiments, a digital PLL (DPLL) is disclosed with a dynamically controllable filter for changing the effective DPLL bandwidth in response to one or more real-time performance parameters such as phase error.

Adaptive digital phase locked loop

In some embodiments, a digital PLL is disclosed with a dynamically controllable filter for changing the effective DPLL bandwidth in response to one or more real-time performance parameters such as phase error.

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Portland, OR, United States of America

Nathaniel August