Lam Research Corporation

Lam Research Ag

Nathan Musselwhite

Mark Naoshi Kawaguchi

Michael Ravkin

Ji Zhu

Bart Jan Van Schravendijk

Thorsten B Lill

David Wingto Cheung

Samantha SiamHwa Tan

Meihua Shen

Hui-Jung Wu

David S Mui

Nagraj Shankar

Yongsik Yu

Gowri Kamarthy

Ananda K Banerji

Kevin M McLaughlin

John Hoang

Ilia Kalinovski

Jialing Yang

Kirk J Ostrowski

Jay E Uglow

Karthik Subramanian Colinjivadi

Hao Chi

Gereng Gunawan

Nikkon Ghosh

Aaron Lynn Routzahn

Gerome Michel Dominique Melaet

Nicholas Dominic Altieri

A method for cleaning a substrate includes arranging the substrate in a processing chamber; controlling a pressure of the processing chamber to a predetermined pressure range; controlling a temperature of the processing chamber to a predetermined temperature range; and supplying a vapor mixture including a metal chelating vapor for a first period to remove metal contamination from surfaces of the substrate.

Vapor cleaning of substrate surfaces

Methods for forming patterned multi-layer stacks including a metal-containing layer are provided herein. Methods involve using silicon-containing non-metal materials in a multi-layer stack including one sacrificial layer to be later removed and replaced with metal while maintaining etch contrast to pattern the multi-layer stack and selectively remove the sacrificial layer prior to depositing metal. Methods involve using silicon oxycarbide in lieu of silicon nitride, and a sacrificial non-metal material in lieu of a metal-containing layer, to fabricate the multi-layer stack, pattern the multi-layer stack, selectively remove the sacrificial non-metal material to leave spaces in the stack, and deposit metal-containing material into the spaces. Sacrificial non-metal materials include silicon nitride and doped polysilicon, such as boron-doped silicon.

Film stack simplification for high aspect ratio patterning and vertical scaling

A method for treating a substrate includes arranging a substrate in a processing chamber. At least one of a vaporized solvent and a gas mixture including the solvent is supplied to the processing chamber to form a conformal liquid layer of the solvent on exposed surfaces of the substrate. The at least one of the vaporized solvent and the gas mixture is removed from the processing chamber. A reactive gas including a halogen species is supplied to the processing chamber. The conformal liquid layer adsorbs the reactive gas to form a reactive liquid layer that etches the exposed surfaces of the substrate.

Efficient cleaning and etching of high aspect ratio structures

Methods and apparatuses for etching metal-doped carbon-containing materials are provided herein. Etching methods include using a mixture of an etching gas suitable for etching the carbon component of the metal-doped carbon-containing material and an additive gas suitable for etching the metal component of the metal-doped carbon-containing material and igniting a plasma to selectively remove metal-doped carbon-containing materials relative to underlayers such as silicon oxide, silicon nitride, and silicon, at high temperatures. Apparatuses suitable for etching metal-doped carbon-containing materials are equipped with a high temperature movable pedestal, a plasma source, and a showerhead between a plasma generating region and the substrate.

Metal doped carbon based hard mask removal in semiconductor fabrication

A method for drying wafer-shaped articles comprises rotating a wafer-shaped article of a predetermined diameter on a rotary chuck, and dispensing a drying liquid onto one side of the wafer-shaped article. The drying liquid comprises greater than 50 mass % of an organic solvent. During at least part of the dispensing step, the wafer-shaped article is heated with a heating assembly. During at least part of the dispensing step a fluorine-containing compound is present in the drying liquid or in a gas that surrounds the drying liquid as the drying liquid contacts the wafer-shaped article.

Method and apparatus for processing wafer-shaped articles

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Oakland, CA, United States of America

Nathan Musselwhite