Therma-wave, Inc.

Nathan Gold

Jon Opsal

Allan Rosencwaig

David L Willenborg

In an ellipsometric apparatus, a laser is provided for generating a probe beam. The probe beam is passed through a polarization section to give the beam a known polarization state. The probe beam is then tightly focused with a high numerical aperture lens onto the surface of the sample. The polarization state of the reflected probe beam is analyzed. In addition, the angle of incidence of one or more rays in the incident probe beam is determined based the radial position of the rays within the reflected probe beam. This approach provides enhanced spatial resolution and allows measurement over a wide spread of angles of incidence without adjusting the position of the optical components. Multiple angle of incidence measurements are greatly simplified.

High resolution ellipsometric apparatus

An apparatus (20) for measuring the thickness of a thin film layer (32) on substrate (28) includes a probe beam of radiation (24) focused substantially normal to the surface of the sample using a high numerical aperture lens (30). The high numerical aperture lens (30) provides a large spread of angles of incidence of the rays within the incident focused beam. A detector (50) measures the intensity across the reflected probe beam as a function of the angle of incidence with respect to the surface of the substrate (28) of various rays within the focused incident probe beam. A processor (52) functions to derive the thickness of the thin film layer based on these angular dependent intensity measurements. This result is achieved by using the angular dependent intensity measurements to solve the layer thickness using variations of the Fresnel equations. The invention is particularly suitable for measuring thin films, such as oxide layers, on silicon semiconductor samples.

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Redwood City, CA, United States of America

Nathan Gold