Philips Lumileds Lighting Company LLC

Glo Ab

Koninklijke Philips Corporation N.v.

Lumileds Lighting U.s., LLC

Lumileds LLC

Soitec

Nanosys, Inc.

S.o.i.tec Silicon on Insulator Technologies

Philips Lumileds Lights Co., LLC

Lumileds Holding B.v.

Koninklijke Philips Electronics N.v.

Gardner, Nathan

Svensson, Carl Patrik Theodor

Nathan Fredrick Gardner

Michael Ragan Krames

Werner K Goetz

Linda T Romano

Sungsoo Yi

John Edward Epler

Michael Jason Grundmann

Fariba Danesh

Michael David Camras

Yu-Chen Shen

Stephen Andrew Stockman

Daniel Bryce Thompson

Jonathan J Wierer, Jr

Melvin Barker Mclaurin

Martin F Schubert

Fabrice Letertre

Gerd O Mueller

Michael Jansen

Richard P Schneider, Jr

Qi Ye

Christopher P Kocot

Melvin B McLaurin

Fan Ren

Frank Michael Steranka

Bruce Faure

Patrick Nolan Grillot

Patrik Svensson

Carl Patrik Theodor Svensson

Aurelien Jean Francois David

Satoshi Watanabe

Andrew Y Kim

David P Bour

Aurelien J F David

Oleg Borisovich Shchekin

Tetsuya Takeuchi

Ghulam Hasnain

Olga Kryliouk

James Chinmo Kim

Pascal Guenard

R Scott Kern

Anusha Pokhriyal

Mark R Hueschen

Miljenko Modric

Giuliano Portilho Vescovi

Fredrick A Kish, Jr

Daniel Alexander Steigerwald

Carlos Mazure

Jerome Chandra Bhat

Richard P Schneider

Troy A Trottier

Ronald T Kaneshiro

William David Collins, Iii

Jonathan J Wierer

Arto V Nurmikko

Sharon N Farrens

Han Ho Choi

Anneli Munkholm

Gangyi Chen

Richard Scott Kern

Jr Fredrick A Kish

Michael R Krames

Patrick N Grillot

Qi Laura Ye

Truls LÖWGREN

Melvin B Mclaurin

A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer. and a GaN barrier layer located on the aluminum gallium nitride layer.

Indium gallium nitride red light emitting diode and method of making thereof

A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer and a GaN barrier layer located on the aluminum gallium nitride layer.

Methods and apparatus are described. An apparatus includes a hexagonal oxide substrate and a III-nitride semiconductor structure adjacent the hexagonal oxide substrate. The III-nitride semiconductor structure includes a light emitting layer between an n-type region and a p-type region. The hexagonal oxide substrate has an in-plane coefficient of thermal expansion (CTE) within 30% of a CTE of the III-nitride semiconductor structure.

Light emitting device with improved extraction efficiency

An LED subpixel can be provided with a reflector layer that controls viewing angles. After formation of an array of nanowires including first conductivity type cores and active layers, a second conductivity type semiconductor material layer, a transparent conductive oxide layer, and a dielectric material layer are sequentially formed. An opening is formed through the dielectric material layer over the array of nanowires. The reflector layer can be formed around the array of nanowires and through the opening in the dielectric material layer on the transparent conductive oxide layer. A conductive bonding structure is formed in electrical contact with the reflector layer.

Light emitting diodes with integrated reflector for a direct view display and method of making thereof

A pixelated display device and a method for making the same are disclosed. The device may include an array of nanowire LEDs located above a substrate. When the nanowire LEDs are initially grown, they may emit first-wavelength light proximally to the substrate and second-wavelength light distally from the substrate. The nanowires may remain as initially grown, in which case only second-wavelength light is visible, or the second-wavelength light emitting portions may be etched away such that only first-wavelength light is visible.

Pixilated display device based upon nanowire LEDs and method for making the same

In accordance with embodiments of the invention, at least partial strain relief in a light emitting layer of a III-nitride light emitting device is provided by configuring the surface on which at least one layer of the device grows such that the layer expands laterally and thus at least partially relaxes. This layer is referred to as the strain-relieved layer. In some embodiments, the light emitting layer itself is the strain-relieved layer, meaning that the light emitting layer is grown on a surface that allows the light emitting layer to expand laterally to relieve strain. In some embodiments, a layer grown before the light emitting layer is the strain-relieved layer. In a first group of embodiments, the strain-relieved layer is grown on a textured surface.

Semiconductor light emitting device growing active layer on textured surface

A backplane optionally having stepped horizontal surfaces and optionally embedding metal interconnect structures is provided. First conductive bonding structures are formed on first stepped horizontal surfaces. First light emitting devices on a first transfer substrate are disposed on the first conductive bonding structures, and a first subset of the first light emitting devices is bonded to the first conductive bonding structures. Laser irradiation can be employed to selectively disconnect the first subset of the first light emitting devices from the first transfer substrate while a second subset of the first light emitting devices remains attached to the first transfer substrate. Additional devices on each additional transfer substrate can be bonded to additional conductive bonding structures on the backplane employing the same method provided that the additional devices are not present in positions that would overlap with pre-existing first light emitting devices or devices on the backplane at a bonding position.

Method of making a light emitting diode array on a backplane

A set of light emitting devices can be formed on a substrate A growth mask having a first aperture in a first area and a second aperture in a second area is formed on a substrate. A first nanowire and a second nanowire are formed in the first and second apertures, respectively. The first nanowire includes a first active region having a first band gap and a second active region having a second band gap. The first band gap is greater than the second hand gap. The second nanowire includes an active region having the first band gap and does not include, or is adjoined to, any material having the second band gap.

Monolithic image chip for near-to-eye display

Light emitting diode array on a backplane and method of making thereof

A method according to embodiments of the invention includes providing a wafer including a semiconductor structure grown on a growth substrate, the semiconductor structure comprising a III-nitride light emitting layer sandwiched between an n-type region and a p-type region. The wafer is bonded to a second substrate. The growth substrate is removed. After bonding the wafer to the second substrate, the wafer is processed into multiple light emitting devices.

Method of processing a semiconductor structure

A LED structure includes a support and a plurality of nanowires located on the support, where each nanowire includes a tip and a sidewall. A method of making the LED structure includes reducing or eliminating the conductivity of the tips of the nanowires compared to the conductivity of the sidewalls during or after creation of the nanowires.

Nanowire sized opto-electronic structure and method for modifying selected portions of same

A light emitting diode (LED) device includes a semiconductor nanowire core, and an In(Al)GaN active region quantum well shell located radially around the semiconductor nanowire core. The active quantum well shell contains indium rich regions having at least 5 atomic percent higher indium content than indium poor regions in the same shell. The active region quantum well shell has a non-uniform surface profile having at least 3 peaks. Each of the at least 3 peaks is separated from an adjacent one of the at least 3 peaks by a valley, and each of the at least 3 peaks extends at least 2 nm in a radial direction away from an adjacent valley.

III-nitride nanowire LED with strain modified surface active region and method of making thereof

Growing community of inventors

Mountain View, CA, United States of America

Nathan Fredrick Gardner