Koninklijke Philips Corporation N.v.

Lumileds LLC

Philips Lumileds Lighting Company LLC

Nathan Frederick Gardner

John Edward Epler

Michael Jason Grundmann

Werner K Goetz

Michael Ragan Krames

Michael David Camras

Stephen Andrew Stockman

Nicolas J Moll

Gloria E Hofler

Christopher P Kocot

Aurelien Jean Francois David

Melvin Barker Mclaurin

Fred A Kish

Herman C Chui

Tun-Sein Tan

Melvin Barker McLaurin

Francisco Alexander Leon

A device includes a substrate () and a III-nitride structure () grown on the substrate, the III-nitride structure comprising a light emitting layer () disposed between an n-type region () and a p-type region (). The substrate is a RA0(MO)where R is one of a trivalent cation: Sc, In, Y and a lanthanide; A is one of a trivalent cation: Fe (III), Ga and Al; M is one for a divalent cation: Mg, Mn, Fe (II), Co, Cu, Zn and Cd; and n is an integer&#x2265;1. The substrate has an inplane lattice constant a. At lease one III-nitride layer in the III-nitride structure has a bulk lattice constant asuch that [(|a&#x2212;a|)/a]*100% is no more than 1%.

III-nitride light emitting device with a region including only ternary, quaternary, and/or quinary III-nitride layers

In embodiments of the invention, a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown on a substrate. The substrate is a non-III-nitride material. The substrate has an in-plane lattice constant a. At least one III-nitride layer in the semiconductor structure has a bulk lattice constant aand [(|a&#x2212;a|)/a]*100% is no more than 1%. A surface of the substrate opposite the surface on which the semiconductor structure is grown is textured.

Light emitting device with improved extraction efficiency

The extraction efficiency of a light emitting device can be improved by making the absorbing device layers as thin as possible. The internal quantum efficiency decreases as the device layers become thinner. An optimal active layer thickness balances both effects. An AlGaInP LED includes a substrate and device layers including an AlGaInP lower confining layer of a first conductivity type, an AlGaInP active region of a second conductivity type, and an AlGaInP upper confining layer of a second conductivity type. The absorbance of the active region is at least one fifth of the total absorbance in the light-emitting device. The device optionally includes at least one set-back layers of AlGaInP interposing one of confining layer and active region. The p-type upper confining layer may be doped with oxygen improve the reliability.

lll-phosphide light emitting devices with thin active layers

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San Jose, CA, United States of America

Nathan Frederick Gardner