Triad National Security, LLC

Los Alamos National Security, LLC

Nathan Andrew Moody

Gautam Gupta

Jeffrey Pietryga

Aditya Mohite

John W Lewellen

Vitaly Pavlenko

Hisato Yamaguchi

Quanxi Jia

Mark Arles Hoffbauer

David James Devlin

Alexei Koshelev

Roger Shurter

Jose Taccetti

David C Lizon

Fangze Liu

Steven John Russell

Lev Boulaevskii

Istvan Robel

David M Feldmann

A photocathode assembly may include: a reflective substrate; an enhancement layer on the reflective substrate; and a photosensitive film on the enhancement layer, wherein the enhancement layer has a thickness of about 10 nm or less.

Photocathodes with an enhancement layer and method of making the same

According to an embodiment of the present disclosure, a thermionic cathode includes: a cathode body having an outer surface, and a sealing layer including one or more graphene sheets on the outer surface of the cathode body. According to another embodiment of the present disclosure, a method for manufacturing a thermionic cathode includes: depositing a sealing layer including one or more graphene sheets on an outer surface of a cathode body.

Thermionic cathode with a graphene sealing layer and method of making the same

According to an embodiment of the present disclosure, a photocathode may include: a mesh having a first surface and a second surface facing away from the first surface, and including metallic, semiconductor or ceramic mesh grid with micron-sized openings in the mesh; a photosensitive film on the first surface of the mesh and extending at least partially into the openings of the mesh; and a graphene layer including one or more graphene sheets on the second surface of the mesh.

Photocathodes with protective in-situ graphene gas barrier films and method of making the same

A tunable photocathode for use in vacuum electronic devices includes a nanostructured photoemission layer including quantum confined nanostructures, such as quantum dots. The quantum confined nanostructures can be tuned (e.g., prepared to have various characteristics or parameters) in order to independently optimize various characteristics of the electron beam emitted by the photocathode. For example, by changing the material composition, size and geometry of the quantum confined nanostructures, the energy levels of the quantum confined nanostructures in the photoemission layer can be tuned to provide a photocathode having a high quantum efficiency, low emittance, fast response time to incident light pulses, long operational lifetime, and increased environmental stability compared with conventional photocathodes and cathodes in vacuum electronic devices.

Tunable quantum confinement and quantum dot photocathode

A photocathode for use in vacuum electronic devices has a bandgap gradient across the thickness (or depth) of the photocathode between the emitting surface and the opposing surface. This bandgap gradient compensates for depth-dependent variations in transport energetics. When the bandgap energy E(z) is increased for electrons with shorter path lengths to the emitting surface and decreased for electrons with longer path lengths to the emitting surface, such that the sum of E(z) and the scattering energy is substantially constant or similar for electrons photoexcited at all locations within the photocathode, the energies of the emitted electrons may be more similar (have less variability), and the emittance of the electron beam may be desirably decreased. The photocathode may be formed of a III-V semiconductor such as InGaN or an oxide semiconductor such as GaInO.

Electron photoemission with tunable excitation and transport energetics

A photocathode device may replenish its photoemissive coating to replace coating material that desorbs/evaporates during photoemission. A linear actuator system may regulate the release of a replenishment material vapor, such as an alkali metal, from a chamber inside the photocathode device to a porous cathode substrate. The replenishment material deposits on the inner surface of a porous membrane and effuses through the membrane to the outer surface, where it replenishes the photoemissive coating. The rate of replenishment of the photoemissive coating may be adjusted using the linear actuator system to regulate performance of the photocathode device during photoemission. Alternatively, the linear actuator system may adjust a plasma discharge gap between a cartridge containing replenishment material and a metal grid. A potential is applied between the cartridge and the grid, resulting in ejection of metal ions from the cartridge that similarly replenish the photoemissive coating.

Photocathode device that replenishes photoemissive coating

Disclosed are graphene shield enhanced photocathodes, such as high QE photocathodes. In certain embodiments, a monolayer graphene shield membrane ruggedizes a high quantum efficiency photoemission electron source by protecting a photosensitive film of the photocathode, extending operational lifetime and simplifying its integration in practical electron sources. In certain embodiments of the disclosed graphene shield enhanced photocathodes, the graphene serves as a transparent shield that does not inhibit photon or electron transmission but isolates the photosensitive film of the photocathode from reactive gas species, preventing contamination and yielding longer lifetime.

Graphene shield enhanced photocathodes and methods for making the same

Terahertz radiation source and method of producing terahertz radiation, said source comprising a junction stack, said junction stack comprising a crystalline material comprising a plurality of self-synchronized intrinsic Josephson junctions; an electrically conductive material in contact with two opposing sides of said crystalline material; and a substrate layer disposed upon at least a portion of both the crystalline material and the electrically-conductive material, wherein the crystalline material has a c-axis which is parallel to the substrate layer, and wherein the source emits at least 1 mW of power.

Tunable terahertz radiation source

An electron source includes a back contact surface having a means for attaching a power source to the back contact surface. The electron source also includes a layer comprising platinum in direct contact with the back contact surface, a composite layer of single-walled carbon nanotubes embedded in platinum in direct contact with the layer comprising platinum. The electron source also includes a nanocrystalline diamond layer in direct contact with the composite layer. The nanocrystalline diamond layer is doped with boron. A portion of the back contact surface is removed to reveal the underlying platinum. The electron source is contained in an evacuable container.

Growing community of inventors

Los Alamos, NM, United States of America

Nathan Andrew Moody