Stmicroelectronics (Crolles 2) Sas

Nathalie Vulliet

Charles Baudot

Sébastien Cremer

Denis Pellissier-Tanon

A photodiode includes an active area formed by intrinsic germanium. The active area is located within a cavity formed in a silicon layer. The cavity is defined by opposed side walls which are angled relative to a direction perpendicular to a bottom surface of the silicon layer. The angled side walls support epitaxial growth of the intrinsic germanium with minimal lattice defects.

Germanium photodiode

A vertical photodiode includes an active area. The contacting pads for the diode terminals are laterally shifted away from the active area so as to not be located above or below the active area. The active area is formed in a layer of semiconductor material by a lower portion of a germanium area that is intrinsic and an upper portion of the germanium area that is doped with a first conductivity type. The vertical photodiode is optically coupled to a waveguide formed in the layer of semiconductor material.

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Crolles, France

Nathalie Vulliet