Globalfoundries Singapore Pte. Ltd.

Vanguard International Semiconductor Singapore Pte. Ltd.

Natarajan Rajasekaran

Rakesh Kumar

Pradeep Yelehanka

Siddharth Chakravarty

Sharath Poikayil Satheesh

Chun Hoe Yik

Yu Ting Ng

A microelectromechanical system (MEMS) device is disclosed. The MEMS device includes a device substrate having a MEMS component in a device region. A top cap is fusion bonded to the top surface of the device substrate and a bottom cap is fusion bonded to the bottom surface of the device substrate. The top and bottom caps encapsulate the MEMS components. A cap includes a via isolation which extends a thickness of the cap and surrounds the device region.

Wafer level encapsulation for MEMS device

A microelectromechanical system (MEMS) device is disclosed. The MEMS device includes a device substrate with a top device surface and a bottom device surface having a MEMS component in a device region. A top device bond ring is disposed on the top device surface surrounding the device region and a bottom device bond ring is disposed on the bottom device surface surrounding the device region. A top cap with a top cap bond ring is bonded to the top device bond ring by a top eutectic bond and a bottom cap with a bottom cap bond ring is bonded to the bottom device bond ring by a bottom eutectic bond. The eutectic bonds encapsulate the MEMS device.

Wafer level packaging for MEMS device

Methods for fabricating semiconductor or micromachined devices with metal structures and methods for forming self-aligned deep cavity metal structures are provided. A method for fabricating a device with a metal structure includes patterning a mask with an opening perimeter bounding an opening over a substrate. The method includes performing an isotropic etch to etch a shallow portion of the substrate exposed by the opening and a shallow portion of the substrate underlying the opening perimeter of the mask. The method also includes performing an anisotropic etch to etch a deep portion of the substrate exposed by the mask opening and a deep portion of the substrate underlying the opening perimeter of the mask to form a cavity having a bottom surface. Further, the method includes depositing metal over the mask, into the mask opening and onto the bottom surface, wherein the metal on the bottom surface forms the metal structure.

Methods for fabricating semiconductor or micromachined devices with metal structures and methods for forming self-aligned deep cavity metal structures

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Singapore, Singapore

Natarajan Rajasekaran