Gosudarstvenny Nauchno-issledovatelsky I Proektny Institut

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Natalya I Lukicheva

Oleg Evgenievich Korobov

Vadim Nikolaevich Maslov

Elena S Jurova

Izidor K Bronshtein

Jury V Sokurenko

Elena M Kistova

Evgeny V Sinitsyn

Ellin Petrovich Bochkarev

Marina Andreevna Konstantinova

Alla Naumovna Lupacheva

Veniamin Mikhailovich Samaginov

Alexandr Nikolaevich Vlasov

Viktor Vasilievich Myasoedov

Felix Aronovich Gimelfarb

Viktor V Myasoedov

A method for producing a heterogeneous semiconductor structure with a composition gradient in which a semiconductor material is transferred through the gaseous phase onto the substrate from a source comprising the two AB and AC components and including a number of parallel strips, each of said strips having a constant ratio between the AB and AC components. At first, the source is gradually brought under the substrate at a speed chosen within the range of 100 cm per hour to 0.1 cm per hour, bringing first the strip of the source, which has a maximum content of the AB component. As all the strips have been brought under the substrate, the source is stopped for a period of time required for the formation of the main layer of a required thickness.

Fabrication of a heterogeneous semiconductor structure with composition

A semiconductor pressure sensing device comprises a solid made as a AB.sub.1-x C.sub.x semiconductor structure composed of two semiconductor materials AB and AC and a means for measuring variations of electrical resistance of the solid in response to changes of the pressure applied thereto, which is electrically connected to the solid, the semiconductor structure having a first group of layers possessing one value of x and a second group of layers possessing a second value of x and alternating with the layers of the first group.

Semiconductor structure sensitive to pressure

A heterogeneous semiconductor structure with a composition gradient is used to produce lasers, spectrometers and pressure gauges and comprises a substrate, a transition layer and a main layer in the form of a doped solid solution of AB.sub.x C.sub.1-x having a composition gradient with a constant direction parallel to the main axis of the substrate's surface. The transition layer 2 is also of a doped solid solution of AB.sub.x C.sub.1-x whose composition continuously changes along the main axis, from the portion with a maximum content of the AB component to the portion corresponding to a maximum content of the AC component in the direction perpendicular to the substrate's surface, and from the composition of the main layer 3 on the boundary with the transition layer 2 to the composition having a maximum content of the AB component on the boundary with the substrate. The semiconductor structure with a composition gradient is produced of material transferred through the gaseous phase onto the substrate from a source comprising the two AB and AC components and including a number of parallel strips, each of said strips having a constant ratio between the AB and AC components. At first, the source is gradually brought under the substrate at a speed chosen within the range of 100 cm per hour to 0.1 cm per hour, bringing first the strip of the source, which has a maximum content of the AB component. After all the strips have been brought under the substrate, the source is stopped for the period of time required for the formation of the main layer to a required thickness.

Heterogeneous semiconductor structure with composition gradient and

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Natalya I Lukicheva