Technologies and Devices International, Inc.

Nataliya Savkina

Vladimir A Dmitriev

Alexander L Syrkin

Denis V Tsvetkov

Stephen Saddow

Alexander Lebedev

Karim Mynbaev

Marina Mynbaeva

A method is disclosed for fabricating monocrystal material with the bandgap width exceeding 1.8 eV. The method comprises the steps of processing a monocrystal semiconductor wafer to develop a porous layer through electrolytic treatment of the wafer at direct current under UV-illumination, and epitaxially growing a monocrystal layer on said porous layer. Growth on porous layer produces semiconductor material with reduced stress and better characteristics than with the same material grown on non-porous layers and substrates. Also, semiconductor device structure comprising at least one layer of porous group III material is included.

Method of crystal growth and resulted structures

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St. Petersburg, Russia

Nataliya Savkina