Motorola Corporation

Natalino Camilleri

David Q Ngo

Gregory Redmond Black

David K Lovelace

Wayne R Burger

Julio C Costa

Daniel J Lamey

Christopher Paul Dragon

A high frequency power FET device (22) is integrated with passive components (23,24,26,28,31), an electro-static discharge (ESD) device (27,127,227), and/or a logic structure (29) on a semiconductor body (13) to form a monolithic high frequency integrated circuit structure (10). The high frequency power FET device (22) includes a grounded source configuration. The logic structure (29) utilizes the high frequency power FET structure in a grounded source configuration as one device in a CMOS implementation.

Monolithic high frequency integrated circuit structure having a grounded

The amplifier (201) uses transistors (401,403) such as MOSFET transistors in a current mirror configuration. The transistors (401,403) are easy to package as surface mount devices. The drain port of the first transistor is coupled to an output signal (207) and a bias input signal (VB+). A gate port of the first transistor is coupled to a bias control input (117) and the signal input (115). The source of the first transistor and the source of the second transistor are coupled to an electrical ground (409). A first end of a resistive device (411) is coupled to the gate port and the drain port of the second transistor and a second end of the resistive device (411) is coupled the signal input (115) and the bias control input (117). This amplifier (201) has low sensitivity to the variations of the bias current to the control signal threshold, making the amplifier ideal for use in a radiotelephone (103).

Amplifier suitable for use in a radiotelephone

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Tempe, AZ, United States of America

Natalino Camilleri