Lam Research Corporation

Novellus Systems Incorporated

Natalia V Doubina

Jonathan David Reid

Matthew A Rigsby

Lee J Brogan

David W Porter

Seshasayee Varadarajan

George Andrew Antonelli

Tighe A Spurlin

James E Duncan

Seyang Park

Embodiments herein relate to methods, apparatus, and systems for electroplating metal into recessed features using a superconformal fill mechanism that provides relatively faster plating within a feature and relatively slower plating in the field region. Moreover, within the feature, plating occurs faster toward the bottom of the feature compared to the top of the feature. The result is that the feature is filled with metal from the bottom upwards, resulting in a high quality fill without the formation of seams or voids, defects that are likely where a conformal fill mechanism is used. The superconformal fill mechanism relies on the presence of a sacrificial oxidant molecule that is used to develop a differential current efficiency within the feature compared to the field region. Various plating conditions are balanced against one another to ensure that the feature fills from the bottom upwards. No organic plating additives are necessary, though plating additives can be used to improve the process.

Process for optimizing cobalt electrofill using sacrificial oxidants

Method and apparatus for reducing metal oxide surfaces to modified metal surfaces are disclosed. By exposing a metal oxide surface to a remote plasma, the metal oxide surface on a substrate can be reduced to pure metal and the metal reflowed. A remote plasma apparatus can treat the metal oxide surface as well as cool, load/unload, and move the substrate within a single standalone apparatus. The remote plasma apparatus includes a processing chamber and a controller configured to provide a substrate having a metal seed layer in a processing chamber, form a remote plasma of a reducing gas species where the remote plasma includes radicals, ions, and/or ultraviolet (UV) radiation from the reducing gas species, and expose a metal seed layer of the substrate to the remote plasma to reduce oxide of the metal seed layer to metal and to reflow the metal.

Method and apparatus for remote plasma treatment for reducing metal oxides on a metal seed layer

Various embodiments herein relate to methods and apparatus for electroplating cobalt on a substrate. In many cases, the cobalt is electroplated into recessed features. The recessed features may include a seed layer such as a cobalt seed layer. Electroplating may occur through a bottom-up mechanism. The bottom-up mechanism may be achieved by using particular additives (e.g., accelerator and suppressor), which may be present in the electrolyte at particular concentrations. Further, leveler, wetting agent, and/or brightening agents may be used to promote high quality plating results. In various embodiments, the substrate is pre-treated to remove oxide (and in some cases carbon impurities) from the seed layer before electroplating takes place. Further, the electrolyte may have a particular conductivity to promote uniform plating results across the face of the substrate.

Chemistry additives and process for cobalt film electrodeposition

A two-step semiconductor electroplating process deposits copper onto wafers coated with a semi-noble metal in manner that is uniform across the wafer and free of voids. A plating bath nucleates copper uniformly and conformably at a high density in a very thin film. A second bath fills the features. A unique pulsed waveform enhances the nucleation density and reduces resistivity of the very thin film deposited in the nucleation operation. The process produces a thinner and conformal copper seed film than traditional PVD copper seed processes.

Two step process for uniform across wafer deposition and void free filling on ruthenium coated wafers

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Portland, OR, United States of America

Natalia V Doubina