Globalfoundries Inc.

Natalia Borjemscaia

John Anthony Fitzsimmons

Michael Jay Shapiro

Shreesh Narasimha

Vincent James McGahay

Daniel J Jaeger

Michael Vincent Aquilino

Daniel James Dechene

Jessica M Dechene

Naved Ahmed Siddiqui

Structures for a field-effect transistor and methods of forming a field-effect transistor. A sidewall spacer is arranged adjacent to a sidewall of a gate electrode, a source/drain region is arranged laterally adjacent to the sidewall spacer, and a contact is arranged over the source/drain region and laterally adjacent to the sidewall spacer. The contact is coupled with the source/drain region. A section of an interlayer dielectric layer is laterally arranged between the contact and the sidewall spacer.

Field-effect transistors with self-aligned and non-self-aligned contact openings

The present disclosure relates to semiconductor structures and, more particularly, to corrosion resistant chip sidewall connections with crackstop structures with a hermetic seal, and methods of manufacture. The structure includes: a guard ring structure surrounding an active region of an integrated circuit chip; an opening formed in the guard ring structure; and a hermetic seal encapsulating the opening and a portion of the guard ring structure, the hermetic seal being structured to prevent moisture ingress to the active region of the integrated circuit chip through the opening.

Corrosion resistant chip sidewall connection with crackstop and hermetic seal

The disclosure generally relates to semiconductor structures and, more particularly, to electrical connections used with crackstop structures and methods of manufacture. The structure includes: a conductive material; a dielectric material formed over the conductive material; a non-corrosive conductive material in at least one opening of the dielectric material and in direct contact with the conductive material; a crackstop structure formed over the dielectric material; and at least one of wiring layer in contact with the non-corrosive conductive material.

Electrical connection around a crackstop structure

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Wappingers Falls, NY, United States of America

Natalia Borjemscaia