Media Lario S.r.l.

Kla-tencor Technologies Corporation

Natale Ceglio

Fabio E Zocchi

Daniel G Stearns

Giovanni Nocerino

Richard Levesque

Boris Grek

Gopal Vasudevan

Giuseppe Valsecchi

Raymond Merrill, Jr

Robert David Banham

Jacques Kools

Gordon Yue

Dragos Maciuca

Giovanni Bianucci

Marco Pedrali

Riccardo Binda

Dean Shough

Systems and methods for synchronous operation of debris-mitigation devices (DMDs) in an EUV radiation source that emits EUV radiation and debris particles are disclosed. The methods include establishing a select relative angular orientation between the first and second DMDs that provides a maximum amount of transmission of EUV radiation between respective first and second rotatable vanes of the first and second DMDs. The methods also include rotating the first and second sets of vanes to capture at least some of the debris particles while substantially maintaining the select relative angular orientation. The systems employ DMD drive units, and an optical-based encoder disc in one of the DMD drive units measures and controls the rotational speed of the rotatable DMD vanes. Systems and methods for optimally aligning the DMDs are also disclosed.

Systems and methods for synchronous operation of debris-mitigation devices

A Sn vapor EUV LLP source system for EUV lithography is disclosed. The system generates a Sn vapor column from a supply of Sn liquid. The Sn column has a Sn-atom density of &#x3c;10atoms/cmand travels at or near sonic speeds. The system also has a Sn vapor condenser arranged to receive the Sn vapor column and condense the Sn vapor to form recycled Sn liquid. A pulse laser irradiates a section of the Sn vapor column. Each pulse generates an under-dense Sn plasma having an electron density of &#x3c;10electrons/cm, thereby allowing the under-dense Sn plasma substantially isotropically emit EUV radiation.

Sn vapor EUV LLP source system for EUV lithography

A source-collector module for an extreme ultraviolet (EUV) lithography system, the module including a laser-produced plasma (LPP) that generates EUV radiation and a grazing-incidence collector (GIC) mirror arranged relative thereto and having an input end and an output end. The LPP is formed using an LPP target system wherein a pulsed laser beam travels on-axis through the GIC and is incident upon solid, moveable LPP target. The GIC mirror is arranged relative to the LPP to receive the EUV radiation therefrom at its input end and focus the received EUV radiation at an intermediate focus adjacent the output end. An example GIC mirror design is presented that includes a polynomial surface-figure correction to compensate for GIC shell thickness effects, thereby improve far-field imaging performance.

Source-collector module with GIC mirror and LPP EUV light source

Source-collector modules for use with EUV lithography systems are disclosed, wherein the source-collector modules employ a laser-produced plasma EUV radiation source and a grazing-incidence collector. The EUV radiation source is generated by first forming an under-dense plasma, and then irradiating the under-dense plasma with infrared radiation of sufficient intensity to create a final EUV-emitting plasma. The grazing incidence collector can include a grating configured to prevent infrared radiation from reaching the intermediate focus. Use of debris mitigation devices preserves the longevity of operation of the source-collector modules.

Source-collector modules for EUV lithography employing a GIC mirror and a LPP source

A collector system for extreme ultraviolet (EUV) radiation includes a collector mirror and a radiation-collection enhancement device (RCED) arranged adjacent an aperture member of an illuminator. The collector mirror directs EUV radiation from an EUV radiation source towards the aperture member. The RCED redirects a portion of the EUV radiation that would not otherwise pass through the aperture of the aperture member or that would not have an optimum angular distribution, to pass through the aperture and to have an improved angular distribution better suited to input specifications of an illuminator. This provides the illuminator with greater amount of useable EUV radiation than would otherwise be available from the collector mirror alone, thereby enhancing the performing of an EUV lithography system that uses such a collector system with a RCED.

EUV collector system with enhanced EUV radiation collection

Systems, assemblies and methods for thermally managing a grazing incidence collector (GIC) for EUV lithography applications are disclosed. The GIC thermal management assembly includes a GIC mirror shell interfaced with a jacket to form a sealed chamber. An open cell, heat transfer (OCHT) material is disposed within the metal chamber and is thermally and mechanically bonded with the GIC mirror shell and jacket. A coolant is flowed in an azimuthally symmetric fashion through the OCHT material between input and output plenums to effectuate cooling when the GIC thermal management assembly is used in a GIC mirror system configured to receive and form collected EUV radiation from an EUV radiation source.

Thermal management systems, assemblies and methods for grazing incidence collectors for EUV lithography

Evaporate thermal management systems for and methods of grazing incidence collectors (GICs) for extreme ultraviolet (EUV) lithography include a GIC shell interfaced with a jacket to form a structure having a leading end and that defines a chamber. The chamber operably supports at least one wicking layer. A conduit connects the wicking layer to a condenser system that support cooling fluid in a reservoir. When heat is applied to the leading end, the cooling fluid is drawn into the chamber from the condenser unit via capillary action in the wicking layer and an optional gravity assist, while vapor is drawn in the opposite direction from the chamber to the condenser unit. Heat is removed from the condensed vapor at the condenser unit, thereby cooling the GIC mirror shell.

Evaporative thermal management of grazing incidence collectors for EUV lithography

A source-collector module (SOCOMO) for generating a laser-produced plasma (LPP) that emits EUV radiation, and a grazing-incidence collector (GIC) mirror arranged relative to the LPP and having an input end and an output end. The LPP is formed using an LPP target system having a light source portion and a target portion, wherein a pulsed laser beam from the light source portion irradiates Sn vapor from a Sn vapor source of the target portion. The GIC mirror is arranged relative to the LPP to receive the EUV radiation at its input end and focus the received EUV radiation at an intermediate focus adjacent the output end. A radiation collection enhancement device may be used to increase the amount of EUV radiation provided to the intermediate focus. An EUV lithography system that utilizes the SOCOMO is also disclosed.

Source-collector module with GIC mirror and tin vapor LPP target system

A source-collector module (SOCOMO) for generating a laser-produced plasma (LPP) that emits EUV radiation, and a grazing-incidence collector (GIC) mirror arranged relative to the LPP and having an input end and an output end. The LPP is formed using an LPP target system having a light source portion and a target portion, wherein a pulsed laser beam from the light source portion irradiates a rotating Sn rod in the target portion to generate the EUV radiation. The GIC mirror is arranged relative to the LPP to receive the EUV radiation at its input end and focus the received EUV radiation at an intermediate focus adjacent the output end. A radiation collection enhancement device having at least one funnel element may be used to increase the amount of EUV radiation provided to the intermediate focus and/or directed to a downstream illuminator. An EUV lithography system that utilizes the SOCOMO is also disclosed.

Source-collector module with GIC mirror and tin rod EUV LPP target system

A source-collector module (SOCOMO) for generating a laser-produced plasma (LPP) that emits EUV radiation, and a grazing-incidence collector (GIC) mirror arranged relative to the LPP and having an input end and an output end. The LPP is formed using an LPP target system having a light source portion and a target portion, wherein a pulsed laser beam from the light source portion irradiates Xenon liquid in the target portion. The GIC mirror is arranged relative to the LPP to receive the EUV radiation at its input end and focus the received EUV radiation at an intermediate focus adjacent the output end. A radiation collection enhancement device having at least one funnel element may be used to increase the amount of EUV radiation provided to the intermediate focus and/or directed to a downstream illuminator. An EUV lithography system that utilizes the SOCOMO is also disclosed.

Source-collector module with GIC mirror and xenon liquid EUV LPP target system

An imaging system for detecting defects on a substrate. Sensor module ports are disposed on an imaging platform. Sensor modules are removably connected to the sensor module ports, and are adapted to sense swaths on the surface of the substrate. Each of the sensor modules includes a time domain integration sensor, optics, an analog controller, and a digital controller. The time domain integration sensor optically senses the swath. The optics focus light from the swath on the time domain integration sensor. The analog controller receives signals from the time domain integration sensor and provides data signals. The digital controller receives the data signals, integrates the data signals into an image of the swath, and provides the image as digital signals to the sensor module port. A master controller receives the digital signals, composites them into a single image of a desired portion of the surface of the substrate, and detects defects within the image. A stage moves the substrate under the sensor modules under the control of the master controller, until the desired portion of the surface of the substrate has been imaged.

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Pleasanton, CA, United States of America

Natale Ceglio