Applied Materials, Inc.

Nasrin Kazem

Jeffrey W Anthis

David P Thompson

Atashi Basu

Michael G Haverty

Muthukumar Kaliappan

Methods of depositing metal films comprising exposing a substrate surface to a first metal precursor followed by a non-oxygen containing reducing agent comprising a second metal to form a zero-valent first metal film are described. The reducing agent has a metal center that is more electropositive than the metal center of the first metal precursor. In some embodiments, methods of depositing ruthenium films are described in which a substrate surface is exposed to a ruthenium precursor to form a ruthenium containing film on the substrate surface followed by exposure to a non-oxygen containing reducing agent to reduce the ruthenium containing film to a zero-valent ruthenium film and generate an oxidized form of the reducing agent.

Ruthenium film deposition using low valent metal precursors

Metal coordination complexes comprising at least one diazabutadiene based ligand having a structure represented by: where Rand Rare selected from the group consisting of C4-C10 alkyl groups; and Rand Rare each independently selected from the group consisting of H, C1-C6 alkyl, cycloalkyl, or aryl groups and the difference in the number of carbons in Rand Ris greater than or equal to 2. Processing methods using the metal coordination complexes are also described.

Metal precursors with modified diazabutadiene ligands for CVD and ALD and methods of use

Methods for filling a substrate feature with a seamless ruthenium gap fill are described. The methods include depositing a ruthenium film, oxidizing the ruthenium film to form an oxidized ruthenium film, reducing the oxidized ruthenium film to a reduced ruthenium film and repeating the oxidation and reduction processes to form a seamless ruthenium gap fill.

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Sunnyvale, CA, United States of America

Nasrin Kazem