Thomson-csf

Thomson Hybrides Et Microondes

Narquise Mamodaly

Alain Bert

Jean Stevance

The invention relates to a compact combiner for ultra-high frequency semiconductor devices, such as negative resistance diodes (Gunn - Impatt). The combiner according to the invention combines on a base: at least one semiconductor pellet or a plurality of semiconductor devices integrated into a single pellet at the center of the base, a first ring of capacitors as located elements, a second dielectric material ring metallized on two opposite planar faces, forming both a second capacitor and part of the encapsulation box of the combiner; and metal tapes ensuring the connections between the active components and the capacitors and simultaneously forming non-located element chokes. A metal cover welded to the outer ring seals the box and supplies the bias. The compact combiner may be used in applications of ultra-high frequency amplifiers and oscillators.

Compact combiner for semiconductor devices operating in the ultra-high

A microwave oscillator integrated in a waveguide includes a negative-resistance diode encapsulated in a capped micromodule, a capacitor fixed on the cap, a resonator fixed on the capacitor and a metallic strip fixed on the capacitor and on a grounding stud. The metallic strip constitutes a device for coupling the diode with the auxiliary load and with the resonator. Outside the resonance frequency of the resonator, no oscillation is possible since the diode is in that case loaded by a low resistance and is not capable of oscillating. The dielectric resonator is the only element which resonates, thus endowing the oscillator with high stability.

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Paris, France

Narquise Mamodaly