Asml Netherlands B.v.

Narjes Javaheri

Mohammadreza Hajiahmadi

Olger Victor Zwier

Gonzalo Roberto Sanguinetti

Maurits Van Der Schaar

Simon Gijsbert Josephus Mathijssen

Patrick Warnaar

Jin Lian

Murat Bozkurt

Sergey Tarabrin

Alberto Da Costa Assafrao

Hilko Dirk Bos

Marc Johannes Noot

Tieh-Ming Chang

Samira Bahrami

Mykhailo Semkiv

Disclosed is a method comprising measuring radiation reflected from a metrology target and decomposing the measured radiation in components, for example Fourier components or spatial components. Further, there is disclosed a recipe selection method which provides an algorithm to select a parameter of the metrology apparatus based on re-calculated dependencies of 5 the measured radiation based on single components.

Metrology method and associated computer product

A method of determining a patterning process parameter from a metrology target, the method including: obtaining a plurality of values of diffraction radiation from the metrology target, each value of the plurality of values corresponding to a different illumination condition of a plurality of illumination conditions of illumination radiation for the target; and using the combination of values to determine a same value of the patterning process parameter for the target.

Metrology parameter determination and metrology recipe selection

Disclosed is a method, and associated apparatuses, for measuring a parameter of interest relating to a structure having at least two layers. The method comprises illuminating the structure with measurement radiation and detecting scattered radiation having been scattered by said structure. The scattered radiation comprises normal and complementary higher diffraction orders. A scatterometry model which relates a scattered radiation parameter to at least a parameter of interest and an asymmetry model which relates the scattered radiation parameter to at least one asymmetry parameter are defined, the asymmetry parameter relating to one or more measurement system errors and/or an asymmetry in the target other than a misalignment between the two layers. A combination of the scatterometry model and asymmetry model is used to determine a system of equations, and the system of equations is then solved for the parameter of interest.

Metrology method and apparatus, computer program and lithographic system

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Eindhoven, Netherlands

Narjes Javaheri